All MOSFET. NTD20N06 Datasheet

 

NTD20N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTD20N06
   Marking Code: 20N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 21.2 nC
   trⓘ - Rise Time: 60.5 nS
   Cossⓘ - Output Capacitance: 213 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: DPAK

 NTD20N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTD20N06 Datasheet (PDF)

 ..1. Size:116K  onsemi
 ntd20n06.pdf

NTD20N06 NTD20N06

NTD20N06Power MOSFET20 Amps, 60 Volts, N-Channel DPAKDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.Featureshttp://onsemi.com Lower RDS(on) Lower VDS(on)V(BR)DSS RDS(on) TYP ID MAX Lower Capacitances60 V 37.5 mW 20 A Lower Total Gate Charge Lower and Tighter VSDN-Cha

 0.1. Size:89K  onsemi
 ntd20n06l ntdv20n06l.pdf

NTD20N06 NTD20N06

NTD20N06L, NTDV20N06LPower MOSFET20 A, 60 V, Logic Level, N-ChannelDPAK/IPAKDesigned for low voltage, high speed switching applications inwww.onsemi.compower supplies, converters and power motor controls and bridgecircuits.V(BR)DSS RDS(on) TYP ID MAXFeatures20 A60 V 39 mW@5.0 V AEC Q101 Qualified - NTDV20N06L (Note 1) These Devices are Pb-Free and are RoHS Compli

 0.2. Size:117K  onsemi
 ntd20n06lg.pdf

NTD20N06 NTD20N06

NTD20N06L, NTDV20N06LPower MOSFET20 Amps, 60 VoltsLogic Level, N-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.V(BR)DSS RDS(on) TYP ID MAXFeatures20 A60 V 39 mW@5.0 V(Note 1) AEC Q101 Qualified - NTDV20N06L These Devices are Pb-Free and are RoHS C

 0.3. Size:82K  onsemi
 ntd20n06l.pdf

NTD20N06 NTD20N06

NTD20N06LPower MOSFET20 Amps, 60 VoltsLogic Level, N-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.V(BR)DSS RDS(on) TYP ID MAXFeatures20 A60 V 39 mW@5.0 V(Note 1) Pb-Free Packages are AvailableTypical ApplicationsN-ChannelD Power Supplies

 0.4. Size:149K  onsemi
 ntd20n06-001 ntd20n06-1g ntd20n06g.pdf

NTD20N06 NTD20N06

NTD20N06, NTDV20N06Power MOSFET20 Amps, 60 Volts, N-Channel DPAKDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.Features Lower RDS(on)http://onsemi.com Lower VDS(on) Lower Capacitances V(BR)DSS RDS(on) TYP ID MAX Lower Total Gate Charge60 V 37.5 mW 20 A Lower and Tighter

 0.5. Size:771K  cn vbsemi
 ntd20n06lt4g.pdf

NTD20N06 NTD20N06

NTD20N06LT4Gwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

 0.6. Size:835K  cn vbsemi
 ntd20n06t4.pdf

NTD20N06 NTD20N06

NTD20N06T4www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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