NTD4810N Datasheet and Replacement
Type Designator: NTD4810N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 54 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 20.7 nS
Cossⓘ - Output Capacitance: 284 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: DPAK
NTD4810N substitution
NTD4810N Datasheet (PDF)
ntd4810n-1g nvd4810n.pdf

NTD4810N, NVD4810NPower MOSFET30 V, 54 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4810NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant10 mW @
ntd4810n-d.pdf

NTD4810NPower MOSFET30 V, 54 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications10 m @10V30 V 54 A CPU Power Delivery15.7 m @4.5 V DC--DC C
ntd4810nh-1g.pdf

NTD4810NHPower MOSFET30 V, 54 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX Low RG10 m @10V30 V 54 A These are Pb--Free Devices16.7 m @4.5 VApplicationsD CPU Power Delive
Datasheet: NTD3055L170 , NTD40N03R , NTD4302 , NTD4804N , NTD4805N , NTD4806N , NTD4808N , NTD4809N , 20N50 , NTD4813N , NTD4813NH , NTD4815N , NTD4855N , NTD4856N , NTD4857N , NTD4858N , NTD4860N .
History: APT1002R4AN
Keywords - NTD4810N MOSFET datasheet
NTD4810N cross reference
NTD4810N equivalent finder
NTD4810N lookup
NTD4810N substitution
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History: APT1002R4AN



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