NTD4855N MOSFET Datasheet: N-Ch, 25V, 98A. Full specification with pinout and replacement list

NTD4855N Specs and Replacement

Type Designator: NTD4855N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 66.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 98 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31.48 nS

Cossⓘ - Output Capacitance: 740 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: DPAK

NTD4855N substitution

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NTD4855N datasheet

0.1. Size:262K onsemi
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NTD4855N Power MOSFET 25 V, 98 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 4.3 m @10V 25 V 98 A Applications 6.0 m @4.5 V VCORE Ap... See More ⇒

8.1. Size:143K onsemi
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NTD4858N MOSFET Power, Single, N-Channel, DPAK/IPAK 25 V, 73 A Features http //onsemi.com Trench Technology Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(ON) MAX ID MAX Low Capacitance to Minimize Driver Losses 6.2 mW @ 10 V Optimized Gate Charge to Minimize Switching Losses 25 V 73 A These are Pb-Free Devices 9.3 mW @ 4.5 V Applications D VC... See More ⇒

8.2. Size:300K onsemi
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NTD4858N Power MOSFET 25 V, 73 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 6.2 m @10V 25 V 73 A Applications 9.3 m @4.5 V VCORE Ap... See More ⇒

8.3. Size:271K onsemi
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NTD4857N Power MOSFET 25 V, 78 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 5.7 m @10V 25 V 78 A Applications 8.0 m @4.5 V VCORE Ap... See More ⇒