NTD4855N
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTD4855N
Marking Code: 4855N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 66.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 98
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 21.8
nC
trⓘ - Rise Time: 31.48
nS
Cossⓘ -
Output Capacitance: 740
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043
Ohm
Package:
DPAK
NTD4855N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTD4855N
Datasheet (PDF)
0.1. Size:262K onsemi
ntd4855n-1g ntd4855n-d.pdf 
NTD4855NPower MOSFET25 V, 98 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices4.3 m @10V25 V98 AApplications6.0 m @4.5 V VCORE Ap
8.1. Size:143K onsemi
ntd4858n.pdf
NTD4858NMOSFET Power, Single,N-Channel, DPAK/IPAK25 V, 73 AFeatureshttp://onsemi.com Trench Technology Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(ON) MAX ID MAX Low Capacitance to Minimize Driver Losses6.2 mW @ 10 V Optimized Gate Charge to Minimize Switching Losses25 V73 A These are Pb-Free Devices 9.3 mW @ 4.5 VApplications D VC
8.2. Size:300K onsemi
ntd4858n-1g ntd4858n.pdf
NTD4858NPower MOSFET25 V, 73 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices6.2 m @10V25 V73 AApplications9.3 m @4.5 V VCORE Ap
8.3. Size:271K onsemi
ntd4857n-1g ntd4857n.pdf
NTD4857NPower MOSFET25 V, 78 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices5.7 m @10V25 V78 AApplications8.0 m @4.5 V VCORE Ap
8.4. Size:155K onsemi
ntd4856n-1g.pdf
NTD4856N, NVD4856NPower MOSFET25 V, 89 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX NVD Prefix for Automotive and Other Applications Requiring4.7 mW @ 10 VUnique Site
8.5. Size:296K onsemi
ntd4856n.pdf
NTD4856NPower MOSFET25 V, 89 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices4.7 m @10V25 V89 AApplications6.8 m @4.5 V VCORE Ap
8.6. Size:296K onsemi
ntd4854n-1g.pdf
NTD4854NPower MOSFET25 V, 128 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices3.6 m @10V25 V128 AApplications4.7 m @4.5 V VCORE
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