NTD4860N MOSFET Datasheet: N-Ch, 25V, 65A. Full specification with pinout and replacement list

NTD4860N Specs and Replacement

Type Designator: NTD4860N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.1 nS

Cossⓘ - Output Capacitance: 342 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: DPAK

NTD4860N substitution

- MOSFET ⓘ Cross-Reference Search

NTD4860N datasheet

..1. Size:118K onsemi
ntd4860n.pdf pdf_icon

NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 7.5 mW @ 10 V 25 V 65 A 11.1 mW @ 4.5 V Applications VCORE App... See More ⇒

..2. Size:282K onsemi
ntd4860n-1g ntd4860n.pdf pdf_icon

NTD4860N Power MOSFET 25 V, 65 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 7.5 m @10V 25 V 65 A Applications 11.1 m @4.5 V VCORE A... See More ⇒

0.1. Size:844K cn vbsemi
ntd4860nt4g.pdf pdf_icon

NTD4860NT4G www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABS... See More ⇒

8.1. Size:296K onsemi
ntd4863n-1g ntd4863n-d.pdf pdf_icon

NTD4863N Power MOSFET 25 V, 49 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 9.3 m @10V 25 V 49 A Applications 14 m @4.5 V VCORE App... See More ⇒