NTD4860N
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTD4860N
Marking Code: 4860N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 65
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 11
nC
trⓘ - Rise Time: 20.1
nS
Cossⓘ -
Output Capacitance: 342
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075
Ohm
Package:
DPAK
NTD4860N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTD4860N
Datasheet (PDF)
..1. Size:118K onsemi
ntd4860n.pdf 
NTD4860NPower MOSFET25 V, 65 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices7.5 mW @ 10 V25 V65 A11.1 mW @ 4.5 VApplications VCORE App
..2. Size:282K onsemi
ntd4860n-1g ntd4860n.pdf
NTD4860NPower MOSFET25 V, 65 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices7.5 m @10V25 V65 AApplications11.1 m @4.5 V VCORE A
0.1. Size:844K cn vbsemi
ntd4860nt4g.pdf
NTD4860NT4Gwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABS
8.1. Size:296K onsemi
ntd4863n-1g ntd4863n-d.pdf
NTD4863NPower MOSFET25 V, 49 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices9.3 m @10V25 V49 AApplications14 m @4.5 V VCORE App
8.2. Size:100K onsemi
ntd4865n.pdf
NTD4865NPower MOSFET25 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices10.9 mW @ 10 V25 V44 AApplications17.2 mW @ 4.5 V VCORE A
8.3. Size:308K onsemi
ntd4865n-1g.pdf
NTD4865NPower MOSFET25 V, 44 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices10.9 m @10V25 V44 AApplications17.2 m @4.5 V VCORE
Datasheet: NTD4810N
, NTD4813N
, NTD4813NH
, NTD4815N
, NTD4855N
, NTD4856N
, NTD4857N
, NTD4858N
, 13N50
, NTD4863N
, NTD4865N
, NTD4904N
, NTD4906N
, NTD4909N
, NTD4910N
, NTD4913N
, NTD4960N
.
