All MOSFET. NTD4960N Datasheet

 

NTD4960N Datasheet and Replacement


   Type Designator: NTD4960N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 342 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DPAK
 

 NTD4960N substitution

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NTD4960N Datasheet (PDF)

 0.1. Size:138K  onsemi
 ntd4960n-1g.pdf pdf_icon

NTD4960N

NTD4960NPower MOSFET30 V, 55 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS8.0

 8.1. Size:123K  1
 ntd4963ng.pdf pdf_icon

NTD4960N

NTD4963NPower MOSFET30 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.6

 8.2. Size:118K  onsemi
 ntd4969n-d.pdf pdf_icon

NTD4960N

NTD4969NPower MOSFET30 V, 41 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.0

 8.3. Size:114K  onsemi
 ntd4969n-1g.pdf pdf_icon

NTD4960N

NTD4969NPower MOSFET30 V, 41 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.0

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Datasheet: NTD4860N , NTD4863N , NTD4865N , NTD4904N , NTD4906N , NTD4909N , NTD4910N , NTD4913N , CS150N03A8 , NTD4963N , NTD4965N , NTD4969N , NTD4970N , NTD5406N , NTD5407N , NTD5413N , NTD5414N .

Keywords - NTD4960N MOSFET datasheet

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