NTD5804N Specs and Replacement
Type Designator: NTD5804N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 69 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18.7 nS
Cossⓘ -
Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: DPAK
- MOSFET ⓘ Cross-Reference Search
NTD5804N datasheet
..1. Size:127K onsemi
ntd5804n.pdf 
NTD5804N Power MOSFET 40 V, 69 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 12 mW @ 5.0 V 40 V 69 A CCFL Backlight 8.5 mW @ 10 V DC Motor Control Class D Amplifier D Power Supply Secondary Side Synchronous Re... See More ⇒
8.1. Size:133K onsemi
ntd5805nt4g.pdf 
NTD5805N, NVD5805N Power MOSFET 40 V, 51 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q101 16 mW @ 5.0 V Qualified and PPAP Capable 40 V 51 A These Devices... See More ⇒
8.2. Size:136K onsemi
ntd5802nt4g.pdf 
NTD5802N, NVD5802N Power MOSFET 40 V, Single N-Channel, 101 A DPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260 C V(BR)DSS RDS(on) ID AEC Q101 Qualified 4.4 mW @ 10 V 101 A 100% Avalanche Tested 40 V AEC Q101 Qualified - NVD580... See More ⇒
8.3. Size:125K onsemi
ntd5806n.pdf 
NTD5806N Power MOSFET 40 V, 33 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 26 mW @ 4.5 V 40 V 33 A CCFL Backlight 19 mW @ 10 V DC Motor Control Power Supply Secondary Side Synchronous Rectification D MAXIMUM RAT... See More ⇒
8.4. Size:124K onsemi
ntd5806nt4g.pdf 
NTD5806N, NVD5806N Power MOSFET 40 V, 33 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable - NVD5806N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 26 mW @ 4.5 V 40 V 33 A Applications 19 mW @ 10 V CCFL Backlight D... See More ⇒
8.5. Size:118K onsemi
ntd5802n nvd5802n.pdf 
NTD5802N, NVD5802N Power MOSFET 40 V, Single N-Channel, 101 A DPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260 C V(BR)DSS RDS(on) ID 100% Avalanche Tested 4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requiring ... See More ⇒
8.6. Size:109K onsemi
ntd5802n-d.pdf 
NTD5802N Power MOSFET 40 V, Single N-Channel, 101 A DPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260 C V(BR)DSS RDS(on) ID AEC Q101 Qualified 4.4 mW @ 10 V 101 A 100% Avalanche Tested 40 V These are Pb-Free Devices 7.8 mW @ 5.... See More ⇒
8.8. Size:112K onsemi
ntd5807n-d.pdf 
NTD5807N Power MOSFET 40 V, 23 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 37 mW @ 4.5 V 16 A 40 V CCFL Backlight 31 mW @ 10 V 23 A DC Motor Control Class D Amplifier D Power Supply Secondary Side Synchr... See More ⇒
8.9. Size:127K onsemi
ntd5805n.pdf 
NTD5805N Power MOSFET 40 V, 51 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 16 mW @ 5.0 V 40 V 51 A LED Backlight Driver 9.5 mW @ 10 V CCFL Backlight DC Motor Control D Power Supply Secondary Side Synchronous... See More ⇒
8.10. Size:111K onsemi
ntd5803n-d.pdf 
NTD5803N Power MOSFET 40 V, 76 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 10.1 mW @ 5.0 V 54 A 40 V CCFL Backlight 7.2 mW @ 10 V 76 A DC Motor Control Class D Amplifier D Power Supply Secondary Side Syn... See More ⇒
8.11. Size:838K cn vbsemi
ntd5806nt4g.pdf 
NTD5806NT4G www.VBsemi.tw N-Channel 4 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.013 at VGS = 10 V 55 40 42 nC 0.018 at VGS = 4.5 V 45 APPLICATIONS D OR-ing TO-252 Server DC/DC G D G S S Top View N-Channel MOSFET ... See More ⇒
8.12. Size:315K cn vbsemi
ntd5807nt.pdf 
NTD5807NT www.VBsemi.com N-Channel 4 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.013 at VGS = 10 V 55 40 42 nC 0.018 at VGS = 4.5 V 45 APPLICATIONS D OR-ing TO-252 Server DC/DC G D G S S Top View N-Channel MOSFET A... See More ⇒
Detailed specifications: NTD4969N, NTD4970N, NTD5406N, NTD5407N, NTD5413N, NTD5414N, NTD5802N, NTD5803N, IRF1405, NTD5805N, NTD5806N, NTD5807N, NTD5862N, NTD5865N, NTD5865NL, NTD5867NL, NTD6414AN
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