NTD5804N PDF and Equivalents Search

 

NTD5804N Specs and Replacement

Type Designator: NTD5804N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 69 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.7 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: DPAK

NTD5804N substitution

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NTD5804N datasheet

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NTD5804N

NTD5804N Power MOSFET 40 V, 69 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 12 mW @ 5.0 V 40 V 69 A CCFL Backlight 8.5 mW @ 10 V DC Motor Control Class D Amplifier D Power Supply Secondary Side Synchronous Re... See More ⇒

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NTD5804N

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 8.1. Size:133K  onsemi
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NTD5804N

NTD5805N, NVD5805N Power MOSFET 40 V, 51 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q101 16 mW @ 5.0 V Qualified and PPAP Capable 40 V 51 A These Devices... See More ⇒

 8.2. Size:136K  onsemi
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NTD5804N

NTD5802N, NVD5802N Power MOSFET 40 V, Single N-Channel, 101 A DPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260 C V(BR)DSS RDS(on) ID AEC Q101 Qualified 4.4 mW @ 10 V 101 A 100% Avalanche Tested 40 V AEC Q101 Qualified - NVD580... See More ⇒

Detailed specifications: NTD4969N, NTD4970N, NTD5406N, NTD5407N, NTD5413N, NTD5414N, NTD5802N, NTD5803N, IRF1405, NTD5805N, NTD5806N, NTD5807N, NTD5862N, NTD5865N, NTD5865NL, NTD5867NL, NTD6414AN

Keywords - NTD5804N MOSFET specs

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