NTD5862N PDF and Equivalents Search

 

NTD5862N Specs and Replacement

Type Designator: NTD5862N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 98 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm

Package: DPAK

NTD5862N substitution

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NTD5862N datasheet

 ..1. Size:137K  onsemi
ntd5862n ntp5862n.pdf pdf_icon

NTD5862N

NTD5862N, NTP5862N MOSFET Power, N-Channel 60 V, 98 A, 5.7 mW Features www.onsemi.com Low RDS(on) V(BR)DSS RDS(on) MAX ID MAX High Current Capability 60 V 5.7 mW @ 10 V 98 A 100% Avalanche Tested These Devices are Pb-Free, Halogen Free and are RoHS Compliant D MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) N-Channel Parameter Symbol Value Unit G Drain-t... See More ⇒

 0.1. Size:115K  onsemi
ntd5862n-1g.pdf pdf_icon

NTD5862N

NTD5862N, NTP5862N N-Channel Power MOSFET 60 V, 98 A, 5.7 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant 60 V 5.7 mW @ 10 V 98 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) D Parameter Symbol Value Unit Drain-to-Source Voltage ... See More ⇒

 0.2. Size:112K  onsemi
ntd5862n-d.pdf pdf_icon

NTD5862N

NTD5862N N-Channel Power MOSFET 60 V, 90 A, 5.7 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested These Devices are Pb-Free, Halogen Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 60 V 5.7 mW @ 10 V 90 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit D Drain-to-Source Voltage VDSS 60 V ... See More ⇒

 8.1. Size:137K  onsemi
ntd5865n-1g.pdf pdf_icon

NTD5862N

NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching http //onsemi.com High Current Capability 100% Avalanche Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant 60 V 18 mW @ 10 V 38 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit D Drain-to-Sou... See More ⇒

Detailed specifications: NTD5413N, NTD5414N, NTD5802N, NTD5803N, NTD5804N, NTD5805N, NTD5806N, NTD5807N, IRF830, NTD5865N, NTD5865NL, NTD5867NL, NTD6414AN, NTD6415AN, NTD6415ANL, NTD6416AN, NTD6416ANL

Keywords - NTD5862N MOSFET specs

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