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NTD5867NL Specs and Replacement

Type Designator: NTD5867NL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.6 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: DPAK

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NTD5867NL datasheet

 ..1. Size:102K  onsemi
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NTD5867NL

NTD5867NL N-Channel Power MOSFET 60 V, 20 A, 39 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 39 mW @ 10 V 20 A 60 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 50 mW @ 4.5 V 18 A Parameter Symbol Value Unit D Drai... See More ⇒

 ..2. Size:835K  cn vbsemi
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NTD5867NL

NTD5867NL www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise not... See More ⇒

 0.1. Size:106K  onsemi
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NTD5867NL

NTD5867NL N-Channel Power MOSFET 60 V, 20 A, 39 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 39 mW @ 10 V 20 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 60 V 50 mW @ 4.5 V 18 A Parameter Symbol Value Unit Drain-to... See More ⇒

 8.1. Size:137K  onsemi
ntd5865n-1g.pdf pdf_icon

NTD5867NL

NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching http //onsemi.com High Current Capability 100% Avalanche Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant 60 V 18 mW @ 10 V 38 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit D Drain-to-Sou... See More ⇒

Detailed specifications: NTD5803N , NTD5804N , NTD5805N , NTD5806N , NTD5807N , NTD5862N , NTD5865N , NTD5865NL , IRFB7545 , NTD6414AN , NTD6415AN , NTD6415ANL , NTD6416AN , NTD6416ANL , NTD70N03R , NTE4151P , NTE4153N .

History: IRLR8113

Keywords - NTD5867NL MOSFET specs

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