NTD6416AN
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTD6416AN
Marking Code: 6416AN
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 71
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 17
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 20
nC
trⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 110
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.081
Ohm
Package:
DPAK
NTD6416AN
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTD6416AN
Datasheet (PDF)
..1. Size:129K onsemi
ntd6416an nvd6416an.pdf 
NTD6416AN, NVD6416ANMOSFET Power,N-Channel100 V, 17 A, 81 mWFeatureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring100 V 81 mW @ 10 V 17 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These De
..2. Size:141K onsemi
ntd6416an.pdf
NTD6416ANN-Channel Power MOSFET100 V, 17 A, 81 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSID MAXCompliantV(BR)DSS RDS(on) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C unless otherwise noted)100 V 81 mW @ 10 V 17 AParameter Symbol Value UnitDrain-to-Source
0.1. Size:137K onsemi
ntd6416an-1g.pdf
NTD6416AN, NVD6416ANN-Channel Power MOSFET100 V, 17 A, 81 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested AEC Q101 Qualified - NVD616ANID MAX These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX (Note 1)100 V 81 mW @ 10 V 17 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value
0.2. Size:149K onsemi
ntd6416anl.pdf
NTD6416ANLN-Channel Power MOSFET100 V, 19 A, 74 mWFeatures Low RDS(on)http://onsemi.com High Current Capability 100% Avalanche Tested These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)100 V 74 mW @ 10 V 19 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 100 VDGate-to-Source Voltage - Continuo
0.3. Size:79K onsemi
ntd6416anl nvd6416anl.pdf
NTD6416ANL, NVD6416ANLN-Channel Power MOSFET100 V, 19 A, 74 mWFeatures Low RDS(on)www.onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX NVD Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101100 V 74 mW @ 10 V 19 AQualified and PPAP Capable These Devices are Pb-Free
0.4. Size:356K cn vbsemi
ntd6416ant.pdf
NTD6416ANTwww.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % UIS tested0.055 at VGS = 10 V 250.057 at VGS = 4.5 V 100 25 21nC0.070 at VGS = 2.5 V 18APPLICATIONS Primary side switchDTO-252GG D SSN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, un
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