NTD6416AN PDF and Equivalents Search

 

NTD6416AN Specs and Replacement


   Type Designator: NTD6416AN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.081 Ohm
   Package: DPAK
 

 NTD6416AN substitution

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NTD6416AN datasheet

 ..1. Size:129K  onsemi
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NTD6416AN

NTD6416AN, NVD6416AN MOSFET Power, N-Channel 100 V, 17 A, 81 mW Features http //onsemi.com Low RDS(on) High Current Capability ID MAX 100% Avalanche Tested V(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring 100 V 81 mW @ 10 V 17 A Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These De... See More ⇒

 ..2. Size:141K  onsemi
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NTD6416AN

NTD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS ID MAX Compliant V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 100 V 81 mW @ 10 V 17 A Parameter Symbol Value Unit Drain-to-Source ... See More ⇒

 0.1. Size:137K  onsemi
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NTD6416AN

NTD6416AN, NVD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested AEC Q101 Qualified - NVD616AN ID MAX These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX (Note 1) 100 V 81 mW @ 10 V 17 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value ... See More ⇒

 0.2. Size:149K  onsemi
ntd6416anl.pdf pdf_icon

NTD6416AN

NTD6416ANL N-Channel Power MOSFET 100 V, 19 A, 74 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 100 V 74 mW @ 10 V 19 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V D Gate-to-Source Voltage - Continuo... See More ⇒

Detailed specifications: NTD5807N , NTD5862N , NTD5865N , NTD5865NL , NTD5867NL , NTD6414AN , NTD6415AN , NTD6415ANL , RU7088R , NTD6416ANL , NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 .

Keywords - NTD6416AN MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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