All MOSFET. NTD6416ANL Datasheet

 

NTD6416ANL Datasheet and Replacement


   Type Designator: NTD6416ANL
   Marking Code: 6416ANL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 25 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.074 Ohm
   Package: DPAK
 

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NTD6416ANL Datasheet (PDF)

 ..1. Size:149K  onsemi
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NTD6416ANL

NTD6416ANLN-Channel Power MOSFET100 V, 19 A, 74 mWFeatures Low RDS(on)http://onsemi.com High Current Capability 100% Avalanche Tested These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)100 V 74 mW @ 10 V 19 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 100 VDGate-to-Source Voltage - Continuo

 ..2. Size:79K  onsemi
 ntd6416anl nvd6416anl.pdf pdf_icon

NTD6416ANL

NTD6416ANL, NVD6416ANLN-Channel Power MOSFET100 V, 19 A, 74 mWFeatures Low RDS(on)www.onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX NVD Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101100 V 74 mW @ 10 V 19 AQualified and PPAP Capable These Devices are Pb-Free

 5.1. Size:129K  onsemi
 ntd6416an nvd6416an.pdf pdf_icon

NTD6416ANL

NTD6416AN, NVD6416ANMOSFET Power,N-Channel100 V, 17 A, 81 mWFeatureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring100 V 81 mW @ 10 V 17 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These De

 5.2. Size:141K  onsemi
 ntd6416an.pdf pdf_icon

NTD6416ANL

NTD6416ANN-Channel Power MOSFET100 V, 17 A, 81 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSID MAXCompliantV(BR)DSS RDS(on) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C unless otherwise noted)100 V 81 mW @ 10 V 17 AParameter Symbol Value UnitDrain-to-Source

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Datasheet: NTD5862N , NTD5865N , NTD5865NL , NTD5867NL , NTD6414AN , NTD6415AN , NTD6415ANL , NTD6416AN , AO4468 , NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 .

History: STU10N10 | FDC8602 | FDC3612 | STU664S

Keywords - NTD6416ANL MOSFET datasheet

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