All MOSFET. NTGD3148N Datasheet

 

NTGD3148N MOSFET. Datasheet pdf. Equivalent

Type Designator: NTGD3148N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.1 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 3.5 A

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: TSOP6

NTGD3148N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTGD3148N Datasheet (PDF)

1.1. ntgd3148n-d.pdf Size:76K _onsemi

NTGD3148N
NTGD3148N

NTGD3148N Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6 Features Low Threshold Levels, VGS(th) < 1.5 V http://onsemi.com Low Gate Charge (3.8 nC) Leading Edge Trench Technology of Low RDS(on) N-CHANNEL MOSFET High Power and Current Handling Capability V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 70 mW @ 4.5 V 20 V 3.5 A Applications 100 mW @ 2.5 V DC-DC Con

3.1. ntgd3149c.pdf Size:120K _onsemi

NTGD3148N
NTGD3148N

NTGD3149C Power MOSFET Complementary, 20 V, +3.5/-2.7 A, TSOP-6 Dual Features Complementary N-Channel and P-Channel MOSFET http://onsemi.com Small Size (3 x 3 mm) Dual TSOP-6 Package Leading Edge Trench Technology for Low On Resistance V(BR)DSS RDS(on) MAX ID MAX (Note 1) Reduced Gate Charge to Improve Switching Response 60 mW @ 4.5 V N-Ch Independently Connected Devices to

3.2. ntgd3147f.pdf Size:109K _onsemi

NTGD3148N
NTGD3148N

NTGD3147F Power MOSFET and Schottky Diode -20 V, -2.5 A, P-Channel with Schottky Barrier Diode, TSOP-6 Features http://onsemi.com Fast Switching P-CHANNEL MOSFET Low Gate Change V(BR)DSS RDS(on) Max ID Max Low RDS(on) 145 mW @ -4.5 V -2.2 A Low VF Schottky Diode -20 V Independently Connected Devices to Provide Design Flexibility 200 mW @ -2.5 V -1.6 A This is a Pb-Fr

Datasheet: NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , NTGD1100L , IRF540 , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 , NTGS3446 .

 

 
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