All MOSFET. NTJD4152P Datasheet

 

NTJD4152P Datasheet and Replacement


   Type Designator: NTJD4152P
   Marking Code: TK*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.272 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.45(min) V
   |Id| ⓘ - Maximum Drain Current: 0.88 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 2.2 nC
   tr ⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: SC88 SOT363
 

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NTJD4152P Datasheet (PDF)

 ..1. Size:126K  onsemi
 ntjd4152p nvjd4152p.pdf pdf_icon

NTJD4152P

NTJD4152P, NVJD4152PMOSFET Dual, P-Channel,Trench Small Signal, ESDProtected, SC-8820 V, 0.88 AFeatureswww.onsemi.com Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70-6 Equivalent)V(BR)DSS RDS(on) Typ ID Max ESD Protected Gate215 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique-20 VSite an

 ..2. Size:88K  onsemi
 ntjd4152p.pdf pdf_icon

NTJD4152P

NTJD4152PTrench Small SignalMOSFET20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88http://onsemi.comFeatures Leading Trench Technology for Low RDS(ON) PerformanceV(BR)DSS RDS(on) Typ ID Max Small Footprint Package (SC70-6 Equivalent)215 mW @ -4.5 V ESD Protected Gate Pb-Free Package is Available-20 V345 mW @ -2.5 V -0.88 AApplications600 mW @ -1.8 V

 0.1. Size:72K  onsemi
 ntjd4152pt1g.pdf pdf_icon

NTJD4152P

NTJD4152PTrench Small SignalMOSFET20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88Features Leading Trench Technology for Low RDS(ON) PerformanceV(BR)DSS RDS(on) Typ ID Max Small Footprint Package (SC70-6 Equivalent)215 mW @ -4.5 V ESD Protected Gate Pb-Free Package is Available-20 V345 mW @ -2.5 V -0.88 AApplications600 mW @ -1.8 V Load/Power Mana

 7.1. Size:142K  onsemi
 ntjd4158c.pdf pdf_icon

NTJD4152P

NTJD4158CSmall Signal MOSFET30 V/-20 V, +0.25/-0.88 A,Complementary, SC-88Featureshttp://onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected GateV(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm)1.0 W @ 4.5 VN-Ch This is a Pb-Free Device 0.25 A30 V1.5 W @ 2.5 VApplications215 mW @ -4.5 VP-Ch-0.88 A-20 V

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Datasheet: NTHS4101P , NTHS4166N , NTHS5404 , NTHS5441T1 , NTHS5443 , NTJD1155L , NTJD4001N , NTJD4105C , IRF1010E , NTJD4158C , NTJD4401N , NTJD5121N , NTJS3151P , NTJS3157N , NTJS4151P , NTJS4405N , NTK3043N .

Keywords - NTJD4152P MOSFET datasheet

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