2SK958 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2SK958
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO220AB

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2SK958 Datasheet (PDF)

..1. Size:143K 1
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Discontinued product.Discontinued product.Discontinued product.

..2. Size:197K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK958DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage.high speed power switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

9.1. Size:145K 1
2sk959.pdf pdf_icon

Discontinued product.Discontinued product.Discontinued product.

9.2. Size:142K 1
2sk956.pdf pdf_icon

Discontinued product.Discontinued product.Discontinued product.

9.3. Size:86K 1
2sk954.pdf pdf_icon

9.4. Size:142K 1
2sk955.pdf pdf_icon

Discontinued product.Discontinued product.Discontinued product.

9.5. Size:227K 1
2sk950.pdf pdf_icon

FUJI POWER MOSFET2SK950N-CHANNEL SILICON POWER MOSFETF- I SERIESOutline DrawingsFeaturesHigh currentTO-220ABLow on-resistanceNo secondary breakdownLow driving powerHigh voltageApplications Switching regulatorsUPS DC-DC convertersGeneral purpose power amplifier3. SourceJEDECTO-220ABEIAJSC-46Equivalent circuit schematicMaximum ratings and characterist

9.6. Size:145K 1
2sk953.pdf pdf_icon

Discontinued product.Discontinued product.Discontinued product.

9.7. Size:142K fuji
2sk957-m.pdf pdf_icon

"2SK957M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK957M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK957M"Powered by ICminer.com Electronic-Library Service CopyRight 2003

9.8. Size:138K fuji
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"2SK951M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK951M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK951M"Powered by ICminer.com Electronic-Library Service CopyRight 2003

9.9. Size:141K fuji
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9.10. Size:135K fuji
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9.11. Size:132K fuji
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9.12. Size:163K fuji
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9.13. Size:201K inchange semiconductor
2sk959.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK959DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage.high speed applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

9.14. Size:203K inchange semiconductor
2sk956.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK956DESCRIPTIONDrain Current I =9A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor co

9.15. Size:202K inchange semiconductor
2sk954.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK954DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage.high speed power switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

9.16. Size:202K inchange semiconductor
2sk955.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK955DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor co

9.17. Size:202K inchange semiconductor
2sk950.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK950DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

9.18. Size:279K inchange semiconductor
2sk957-mr.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK957-MRFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

9.19. Size:200K inchange semiconductor
2sk952.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK952DESCRIPTIONDrain Current I =2.5A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rel

9.20. Size:204K inchange semiconductor
2sk953.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK953DESCRIPTIONDrain Current I =2.5A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rel

Datasheet: 2SK952 , 2SK953 , 2SK954 , 2SK955 , 2SK956 , 2SK956-01 , 2SK957 , 2SK957-01 , STP65NF06 , 2SK959 , 2SK960 , 2SK960-MR , 2SK961 , 2SK962 , 2SK962-01 , 2SK963 , 2SK970 .

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2SK958 MOSFET. Datasheet pdf. Equivalent

2SK958 Datasheet (PDF)

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