NTLJD3119C
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTLJD3119C
Marking Code: JM*
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.71
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 2.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 3.7
nC
trⓘ - Rise Time: 4.7
nS
Cossⓘ -
Output Capacitance: 72
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065
Ohm
Package: WDFN6
NTLJD3119C
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTLJD3119C
Datasheet (PDF)
..1. Size:169K onsemi
ntljd3119c.pdf 
NTLJD3119CPower MOSFET20 V/-20 V, 4.6 A/-4.1 A, mCooltComplementary, 2x2 mm, WDFN PackageFeatures Complementary N-Channel and P-Channel MOSFET WDFN Package with Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction Footprint Same as SC-88 PackageV(BR)DSS RDS(on) MAX ID MAX Leading Edge Trench Technology for Low On Resistance65 mW @ 4.5 V 3.8 A
0.1. Size:127K onsemi
ntljd3119ctag ntljd3119ctbg.pdf
NTLJD3119CPower MOSFET20 V/-20 V, 4.6 A/-4.1 A, mCooltComplementary, 2x2 mm, WDFN PackageFeatures Complementary N-Channel and P-Channel MOSFET WDFN Package with Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction Footprint Same as SC-88 PackageV(BR)DSS RDS(on) MAX ID MAX Leading Edge Trench Technology for Low On Resistance65 mW @ 4.5 V 3.8 A
6.1. Size:151K onsemi
ntljd3115p.pdf
NTLJD3115PPower MOSFET-20 V, -4.1 A, mCoolt Dual P-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) Solution in 2x2 mm Package100 mW @ -4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive
7.1. Size:128K onsemi
ntljd3182fztag ntljd3182fztbg.pdf
NTLJD3182FZPower MOSFET andSchottky Diode-20 V, -4.0 A, mCoolt Single P-Channel& Schottky Barrier Diode, ESDFeatures WDFN 2x2 mm Package with Exposed Drain Pads for Excellenthttp://onsemi.comThermal Conduction Lowest RDS(on) Solution in 2x2 mm Package P-CHANNEL MOSFET Footprint Same as SC-88 PackageV(BR)DSS RDS(on) MaxID Max Low Profile (
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