NTLJD3119C Specs and Replacement
Type Designator: NTLJD3119C
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.7 nS
Cossⓘ - Output Capacitance: 72 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: WDFN6
NTLJD3119C substitution
- MOSFET ⓘ Cross-Reference Search
NTLJD3119C datasheet
ntljd3115p.pdf
NTLJD3115P Power MOSFET -20 V, -4.1 A, mCoolt Dual P-Channel, 2x2 mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) Solution in 2x2 mm Package 100 mW @ -4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive ... See More ⇒
ntljd3182fztag ntljd3182fztbg.pdf
NTLJD3182FZ Power MOSFET and Schottky Diode -20 V, -4.0 A, mCoolt Single P-Channel & Schottky Barrier Diode, ESD Features WDFN 2x2 mm Package with Exposed Drain Pads for Excellent http //onsemi.com Thermal Conduction Lowest RDS(on) Solution in 2x2 mm Package P-CHANNEL MOSFET Footprint Same as SC-88 Package V(BR)DSS RDS(on) Max ID Max Low Profile (... See More ⇒
Detailed specifications: NTJS4151P, NTJS4405N, NTK3043N, NTK3134N, NTK3139P, NTLGD3502N, NTLGF3402P, NTLJD3115P, IRF1010E, NTLJD4116N, NTLJF3117P, NTLJF4156N, NTLJS2103P, NTLJS3113P, NTLJS4114N, QM3098M6, NTLUF4189NZ
Keywords - NTLJD3119C MOSFET specs
NTLJD3119C cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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