All MOSFET. NTMD5836NL Datasheet

 

NTMD5836NL Datasheet and Replacement


   Type Designator: NTMD5836NL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOIC8
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NTMD5836NL Datasheet (PDF)

 ..1. Size:144K  onsemi
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NTMD5836NL

NTMD5836NLPower MOSFET40 V, Dual N-Channel, SOIC-8Features Asymmetrical N Channelshttp://onsemi.com Low RDS(on) Low Capacitance Optimized Gate ChargeN-Channel 1 N-Channel 2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS D1 D2CompliantID MaxG1 G2(Notes 1 and 2)V(BR)DSS RDS(on) MaxChannel 1 40 V 12 mW @ 10 V 11 AS1 S216 mW @ 4.5 V

 0.1. Size:131K  onsemi
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NTMD5836NL

NTMD5836NLPower MOSFET40 V, Dual N-Channel, SOIC-8Features Asymmetrical N Channelshttp://onsemi.com Low RDS(on) Low CapacitanceN-Channel 1 N-Channel 2 Optimized Gate ChargeD1 D2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantG1 G2ID Max(Notes 1 and 2)V(BR)DSS RDS(on) MaxS1 S2Channel 1 40 V 12 mW @ 10 V 11 A16 mW @ 4.5 V

 7.1. Size:121K  onsemi
ntmd5838nl.pdf pdf_icon

NTMD5836NL

NTMD5838NLPower MOSFET40 V, 8.9 A, 25 mW, Dual N-Channel SO-8Features Low RDS(on) Low Capacitancehttp://onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)25 mW @ 10 V40 V 8.9 AParameter Symbol Value Unit30.8 mW @ 4.5 VDra

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

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