NTMD5836NL MOSFET Datasheet: N-Ch, 40V, 9A. Full specification with pinout and replacement list

NTMD5836NL Specs and Replacement

Type Designator: NTMD5836NL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 315 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: SOIC8

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NTMD5836NL datasheet

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NTMD5836NL Power MOSFET 40 V, Dual N-Channel, SOIC-8 Features Asymmetrical N Channels http //onsemi.com Low RDS(on) Low Capacitance Optimized Gate Charge N-Channel 1 N-Channel 2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS D1 D2 Compliant ID Max G1 G2 (Notes 1 and 2) V(BR)DSS RDS(on) Max Channel 1 40 V 12 mW @ 10 V 11 A S1 S2 16 mW @ 4.5 V ... See More ⇒

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NTMD5836NL Power MOSFET 40 V, Dual N-Channel, SOIC-8 Features Asymmetrical N Channels http //onsemi.com Low RDS(on) Low Capacitance N-Channel 1 N-Channel 2 Optimized Gate Charge D1 D2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant G1 G2 ID Max (Notes 1 and 2) V(BR)DSS RDS(on) Max S1 S2 Channel 1 40 V 12 mW @ 10 V 11 A 16 mW @ 4.5 V... See More ⇒

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NTMD5838NL Power MOSFET 40 V, 8.9 A, 25 mW, Dual N-Channel SO-8 Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 25 mW @ 10 V 40 V 8.9 A Parameter Symbol Value Unit 30.8 mW @ 4.5 V Dra... See More ⇒

Detailed specifications: NTLUF4189NZ, QN3109M6N, S60N12R, NTMD3P03, NTMD4184PF, NTMD4820N, NTMD4840N, NTMD4884NF, 10N65, NTMD5838NL, NTMD6N02R2, NTMD6N03R2, NTMD6N04R2, S60N12S, NTMFS4119N, NTMFS4821N, NTMFS4823N

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