All MOSFET. NTMD6N03R2 Datasheet

 

NTMD6N03R2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTMD6N03R2
   Marking Code: E6N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SOIC8

 NTMD6N03R2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMD6N03R2 Datasheet (PDF)

 ..1. Size:160K  onsemi
 ntmd6n03r2.pdf

NTMD6N03R2 NTMD6N03R2

NTMD6N03R2Power MOSFET30 V, 6 A, Dual N-Channel SOIC-8Features Designed for use in low voltage, high speed switching applications http://onsemi.com Ultra Low On-Resistance ProvidesHigher Efficiency and Extends Battery LifeVDSS RDS(ON) Typ ID Max- RDS(on) = 0.024 W, VGS = 10 V (Typ)30 V 24 mW @ VGS = 10 V 6.0 A- RDS(on) = 0.030 W, VGS = 4.5 V (Typ) Miniature SOIC-8

 0.1. Size:332K  onsemi
 ntmd6n03r2g nvmd6n03r2g.pdf

NTMD6N03R2 NTMD6N03R2

NTMD6N03R2,NVMD6N03R2Power MOSFET30 V, 6A, Dual N--Channel SOIC--8http://onsemi.comFeatures Designed for use in low voltage, high speed switching applicationsVDSS RDS(ON) Typ ID Max Ultra Low On--Resistance ProvidesHigher Efficiency and Extends Battery Life30 V 24 m @VGS =10V 6.0 A-- RDS(on) = 0.024 , VGS = 10 V (Typ)-- RDS(on) = 0.030 , VGS = 4.5 V (Typ)N-

 7.1. Size:74K  onsemi
 ntmd6n02r2-d.pdf

NTMD6N03R2 NTMD6N03R2

NTMD6N02R2Power MOSFET6.0 Amps, 20 VoltsN-Channel Enhancement ModeDual SO-8 Packagehttp://onsemi.comFeaturesVDSS RDS(ON) TYP ID MAX Ultra Low RDS(on)20 V 35 mW @ VGS = 4.5 V 6.0 A Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SOIC-8 Surface Mount PackageN-Channel Diode Exhibits High Speed, Soft RecoveryD Avalanch

 7.2. Size:78K  onsemi
 ntmd6n04r2.pdf

NTMD6N03R2 NTMD6N03R2

NTMD6N04R2Power MOSFET40 V, 5.8 A, Dual N-Channel SOIC-8Features Designed for use in low voltage, high speed switching applicationshttp://onsemi.com Ultra Low On-Resistance ProvidesHigher Efficiency and Extends Battery Life - RDS(on) = 0.027 W, VGS = 10 V (Typ)VDSS RDS(ON) Typ ID Max - RDS(on) = 0.034 W, VGS = 4.5 V (Typ)40 V 27 mW @ VGS = 10 V 5.8 A Miniature S

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