All MOSFET. S60N12S Datasheet

 

S60N12S MOSFET. Datasheet pdf. Equivalent


   Type Designator: S60N12S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 162 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 86 nC
   trⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 573 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: TO263

 S60N12S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

S60N12S Datasheet (PDF)

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Datasheet: NTMD4820N , NTMD4840N , NTMD4884NF , NTMD5836NL , NTMD5838NL , NTMD6N02R2 , NTMD6N03R2 , NTMD6N04R2 , K2611 , NTMFS4119N , NTMFS4821N , NTMFS4823N , NTMFS4825NFE , NTMFS4826NE , NTMFS4833N , NTMFS4833NS , NTMFS4834N .

 

 
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