2SK960-MR Datasheet and Replacement

isc N-Channel MOSFET Transistor 2SK960-MRFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

FUJI POWER MOSFET2SK961N-CHANNEL SILICON POWER MOSFETF- I SERIESOutline DrawingsFeaturesHigh currentTO-220ABLow on-resistanceNo secondary breakdownLow driving powerHigh voltageApplications Switching regulatorsUPS DC-DC convertersGeneral purpose power amplifier3. SourceJEDEC TO-220ABEIAJ SC-46Equivalent circuit schematicMaximum ratings and characteristic

Power F-MOS FETs 2SK9632SK963Silicon N-Channel Power F-MOSUnit : mm Features7.0 0.3 3.5 0.23.0 0.2Low ON-resistance RDS(on) : RDS(on) = 0.45(typ)High-speed switching : tf = 45ns(typ)No secondary breakdown1.1 0.1 0.85 0.1 Applications0.75 0.1 0.4 0.1DC-DC converterNon-contact relaySolenoid drive2.3 0.24.6 0.4Motor drive1 2 31 : Gate

isc N-Channel MOSFET Transistor 2SK961DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and solenoi