NTMFS4939N MOSFET. Datasheet pdf. Equivalent
Type Designator: NTMFS4939N
Marking Code: 4939N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.58 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 15.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 28.5 nC
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 642 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: SO8FL
NTMFS4939N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTMFS4939N Datasheet (PDF)
ntmfs4939n.pdf
NTMFS4939NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 53 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.5 mW @ 10 VCompliant 30 V 53 A8.0 mW @ 4.5 V
ntmfs4939n-d.pdf
NTMFS4939NPower MOSFET30 V, 53 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V30 V 53 A CP
ntmfs4939nt1g.pdf
NTMFS4939NPower MOSFET30 V, 53 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V30 V 53 A CP
ntmfs4936nt1g.pdf
NTMFS4936N,NTMFS4936NCPower MOSFET30 V, 79 A, Single N-Channel, SO-8 FLFeatures Low RDS(on), Low Capacitance and Optimized Gate Charge toMinimize Conduction, Driver and Switching Losseshttp://onsemi.com Next Generation Enhanced Body Diode, Engineered for SoftRecovery, Provides Schottky-Like PerformanceV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen
ntmfs4933n.pdf
NTMFS4933NPower MOSFET30 V, 210 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Improve Conduction and Overall Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantApplicationsV(BR)DSS RDS(ON) MAX ID MAX OR-ing FET, Power Load Switch, Motor Control Refer to Application Note AND8195/D for Mounting Information1.2
ntmfs4934n.pdf
NTMFS4934NPower MOSFET30 V, 147 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant2.0 mW @ 10 VApplications30 V147 A3.0
ntmfs4933nt1g.pdf
NTMFS4933NPower MOSFET30 V, 210 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Improve Conduction and Overall Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantApplicationsV(BR)DSS RDS(ON) MAX ID MAX OR-ing FET, Power Load Switch, Motor Control Refer to Application Note AND8195/D for Mounting Information1.2
ntmfs4937nt1g.pdf
NTMFS4937NPower MOSFET30 V, 70 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications4.0 mW @ 10 V CPU Power Del
ntmfs4936n-d.pdf
NTMFS4936NPower MOSFET30 V, 79 A, Single N-Channel, SO-8 FLFeatures Low RDS(on), Low Capacitance and Optimized Gate Charge toMinimize Conduction, Driver and Switching Losseshttp://onsemi.com Next Generation Enhanced Body Diode, Engineered for SoftRecovery, Provides Schottky-Like Performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON
ntmfs4936n ntmfs4936nc.pdf
NTMFS4936N,NTMFS4936NCMOSFET Power, Single,N-Channel, SO-8 FL30 V, 79 AFeatureshttp://onsemi.com Low RDS(on), Low Capacitance and Optimized Gate Charge toMinimize Conduction, Driver and Switching LossesV(BR)DSS RDS(ON) MAX ID MAX Next Generation Enhanced Body Diode, Engineered for Soft3.8 mW @ 10 VRecovery, Provides Schottky-Like Performance30 V 79 A The
ntmfs4935n.pdf
NTMFS4935NPower MOSFET30 V, 93 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications3.2 mW @ 10 V CPU Power Deli
ntmfs4934nt1g.pdf
NTMFS4934NPower MOSFET30 V, 147 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant2.0 mW @ 10 VApplications30 V147 A3.0
ntmfs4931n.pdf
NTMFS4931NPower MOSFET30 V, 246 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Improve Conduction and Overall Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantApplicationsV(BR)DSS RDS(ON) MAX ID MAX OR-ing FET, Power Load Switch, Motor Control1.1 mW @ 10 V Refer to Application Note AND8195/D for Mounting I
ntmfs4935nbt1g ntmfs4935nct1g ntmfs4935nt1g.pdf
NTMFS4935NPower MOSFET30 V, 93 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications3.2 mW @ 10 V CPU Power Del
ntmfs4937n.pdf
NTMFS4937NPower MOSFET30 V, 70 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications4.5 mW @ 10 V CPU Power Del
Datasheet: NTMFS4925N , NTMFS4926N , NTMFS4927N , NTMFS4933N , NTMFS4934N , NTMFS4935N , NTMFS4936N , NTMFS4937N , IRF730 , NTMFS4941N , NTMFS4943N , NTMFS5830NL , NTMFS5832NL , NTMFS5834NL , NTMFS5844NL , TK2R9E10PL , NTMS4176P .
