NTMS4802N MOSFET. Datasheet pdf. Equivalent

   Type Designator: NTMS4802N
   Marking Code: 4802N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 880 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: SO8

NTMS4802N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

NTMS4802N Datasheet (PDF)

..1. Size:111K onsemi
ntms4802n ntms4802nr2g.pdf

NTMS4802NPower MOSFET30 V, 18 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications4.0 mW @ 10 V30 V 18 A DC-DC Converters5.5 mW @ 4.5 V Synchronous MOSFET

7.1. Size:88K onsemi
ntms4807n-d ntms4807nr2g.pdf

NTMS4807NPower MOSFET30 V, 14.8 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.1 mW @ 10 V Disk Drives30 V 14.8 A DC-DC Converters 7.5 mW @ 4.5 V Pri

7.2. Size:136K onsemi
ntms4800n.pdf

NTMS4800NPower MOSFET30 V, 8 A, N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device20 mW @ 10 VApplications30 V 8 A27 mW @ 4.5 V

7.3. Size:132K onsemi
ntms4800nr2g.pdf

7.4. Size:135K onsemi
ntms4801n.pdf

NTMS4801NPower MOSFET30 V, 12 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications9.0 mW @ 10 V30 V 12 A DC-DC Converters12.5 mW @ 4.5 V Synchronous MOSFET

7.5. Size:88K onsemi
ntms4807n.pdf