All MOSFET. NTMS4816N Datasheet

 

NTMS4816N Datasheet and Replacement


   Type Designator: NTMS4816N
   Marking Code: 4816N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 18.3 nC
   tr ⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SO8
 

 NTMS4816N substitution

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NTMS4816N Datasheet (PDF)

 ..1. Size:88K  onsemi
ntms4816n.pdf pdf_icon

NTMS4816N

NTMS4816NPower MOSFET30 V, 11 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications10 mW @ 10 V Disk Drives30 V 11 A DC-DC Converters 16 mW @ 4.5 V Printers

 0.1. Size:106K  onsemi
ntms4816nr2g.pdf pdf_icon

NTMS4816N

NTMS4816N, NVMS4816NPower MOSFET30 V, 11 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable - NVMS4816N These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXApplications10

 8.1. Size:88K  onsemi
ntms4807n-d ntms4807nr2g.pdf pdf_icon

NTMS4816N

NTMS4807NPower MOSFET30 V, 14.8 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.1 mW @ 10 V Disk Drives30 V 14.8 A DC-DC Converters 7.5 mW @ 4.5 V Pri

 8.2. Size:115K  onsemi
ntms4873nf-d ntms4873nfr2g.pdf pdf_icon

NTMS4816N

NTMS4873NFPower MOSFET30 V, 11.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes SyncFET Schottky Diodehttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device12 mW @ 10 V

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRLI610A | LSH65R2K5GT

Keywords - NTMS4816N MOSFET datasheet

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