NTMS4816N PDF and Equivalents Search

 

NTMS4816N Specs and Replacement

Type Designator: NTMS4816N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.8 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: SO8

NTMS4816N substitution

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NTMS4816N datasheet

 ..1. Size:88K  onsemi
ntms4816n.pdf pdf_icon

NTMS4816N

NTMS4816N Power MOSFET 30 V, 11 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com This is a Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 10 mW @ 10 V Disk Drives 30 V 11 A DC-DC Converters 16 mW @ 4.5 V Printers ... See More ⇒

 0.1. Size:106K  onsemi
ntms4816nr2g.pdf pdf_icon

NTMS4816N

NTMS4816N, NVMS4816N Power MOSFET 30 V, 11 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com AEC-Q101 Qualified and PPAP Capable - NVMS4816N These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 10 ... See More ⇒

 8.1. Size:88K  onsemi
ntms4807n-d ntms4807nr2g.pdf pdf_icon

NTMS4816N

NTMS4807N Power MOSFET 30 V, 14.8 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com This is a Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.1 mW @ 10 V Disk Drives 30 V 14.8 A DC-DC Converters 7.5 mW @ 4.5 V Pri... See More ⇒

 8.2. Size:115K  onsemi
ntms4873nf-d ntms4873nfr2g.pdf pdf_icon

NTMS4816N

NTMS4873NF Power MOSFET 30 V, 11.5 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes SyncFET Schottky Diode http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device 12 mW @ 10 V ... See More ⇒

Detailed specifications: TK2R9E10PL, NTMS4176P, NTMS4177P, NTMS4503N, NTMS4800N, NTMS4801N, NTMS4802N, NTMS4807N, IRF640N, NTMS4873NF, NTMS4916N, NTMS4917N, NTMS4920N, NTMS4937N, NTMS4939N, NTMS5835NL, NTMS5838NL

Keywords - NTMS4816N MOSFET specs

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