NTR4003N PDF and Equivalents Search

 

NTR4003N Specs and Replacement

Type Designator: NTR4003N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47.9 nS

Cossⓘ - Output Capacitance: 19.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: SOT23

NTR4003N substitution

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NTR4003N datasheet

 ..1. Size:84K  onsemi
ntr4003n nvr4003n.pdf pdf_icon

NTR4003N

NTR4003N, NVR4003N Small Signal MOSFET 30 V, 0.56 A, Single N-Channel, SOT-23 Features Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching www.onsemi.com ESD Protected Gate SOT-23 Package Provides Excellent Thermal Performance V(BR)DSS RDS(on) TYP ID MAX Minimum Breakdown Voltage Rating of 30 V 1.0 W @ 4.0 V ... See More ⇒

 ..2. Size:89K  kexin
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NTR4003N

SMD Type MOSFET N-Channel Enhancement MOSFET NTR4003N (KTR4003N) SOT-23 Features Unit mm +0.1 2.9 -0.1 VDS (V) =30V +0.1 0.4 -0.1 ID =0.56A(VGS = 20V) 3 RDS(ON) 1.5 (VGS =4V) RDS(ON) 2 (VGS =2.5V) 12 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30... See More ⇒

 ..3. Size:1465K  slkor
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NTR4003N

NTR4003N N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 560mA D R ( at V =4.5V) DS(ON) GS 1.5ohm R ( at V =3.7V) DS(ON) GS 2.5ohm General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage Applicat... See More ⇒

 0.1. Size:95K  onsemi
ntr4003nt1g.pdf pdf_icon

NTR4003N

NTR4003N, NVR4003N Small Signal MOSFET 30 V, 0.56 A, Single N-Channel, SOT-23 Features Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching http //onsemi.com ESD Protected Gate SOT-23 Package Provides Excellent Thermal Performance V(BR)DSS RDS(on) TYP ID MAX Minimum Breakdown Voltage Rating of 30 V 1.0 W @ 4.0... See More ⇒

Detailed specifications: NTP6410AN, NTP6411AN, NTP6412AN, NTP6413AN, NTR0202PL, NTR1P02, NTR1P02LT1, NTR2101P, IRFP260, IPS65R650CE, NTR4170N, NTR4171P, NTR4501N, NTR4502P, NTR4503N, NTS2101P, NTS4001N

Keywords - NTR4003N MOSFET specs

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