NTS4001N Datasheet and Replacement
Type Designator: NTS4001N
Marking Code: TD*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id| ⓘ - Maximum Drain Current: 0.27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 0.9 nC
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 19 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: SC70 SOT323
NTS4001N substitution
NTS4001N Datasheet (PDF)
nts4001n nvs4001n.pdf

NTS4001N, NVS4001NMOSFET Single,N-Channel, Small Signal,SC-7030 V, 270 mAhttp://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID Max Low Gate Charge for Fast Switching1.0 W @ 4.0 V Small Footprint - 30% Smaller than TSOP-6270 mA30 V ESD Protected Gate1.5 W @ 2.5 V AEC-Q101 Qualified and PPAP Capable - NVS4001N These Devices are Pb-Free and are RoHS Co
nts4001n-d.pdf

NTS4001NSmall Signal MOSFET30 V, 270 mA, Single N-Channel, SC-70Features Low Gate Charge for Fast Switching http://onsemi.com Small Footprint - 30% Smaller than TSOP-6V(BR)DSS RDS(on) TYP ID Max ESD Protected Gate1.0 W @ 4.0 V Pb-Free Package is Available270 mA30 V1.5 W @ 2.5 VApplications Low Side Load SwitchSC-70/SOT-323 (3 LEADS) Li-Ion Batte
nts4001nt1 nvs4001n.pdf

NTS4001N, NVS4001NSmall Signal MOSFET30 V, 270 mA, Single N-Channel, SC-70Features Low Gate Charge for Fast Switchinghttp://onsemi.com Small Footprint - 30% Smaller than TSOP-6V(BR)DSS RDS(on) TYP ID Max ESD Protected Gate AEC-Q101 Qualified and PPAP Capable - NVS4001N1.0 W @ 4.0 V270 mA30 V These Devices are Pb-Free and are RoHS Compliant1.5 W @ 2.5 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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