NTS4173P MOSFET Datasheet: P-Ch, 30V, 1.2A. Full specification with pinout and replacement list

NTS4173P Specs and Replacement

Type Designator: NTS4173P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SC70 SOT323

NTS4173P substitution

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NTS4173P datasheet

0.1. Size:108K onsemi
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NTS4173P Power MOSFET -30 V, -1.3 A, Single P-Channel, SC-70 Features -30 V BVds, Low RDS(on) in SC-70 Package Low Threshold Voltage http //onsemi.com Fast Switching Speed This is a Halide-Free Device V(BR)DSS RDS(on) MAX ID MAX This is a Pb-Free Device 150 mW @ -10 V -1.2 A Applications -30 V 200 mW @ -4.5 V -1.0 A Load Switch 280 mW @ -2.5 V -0.9 A ... See More ⇒

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NTS4172N Power MOSFET 30 V, 1.7 A, Single N-Channel, SC-70 Features Low On-Resistance Low Gate Threshold Voltage http //onsemi.com Halide Free This is a Pb-Free Device V(BR)DSS RDS(on) MAX ID MAX 93 mW @ 10 V 1.7 A Applications Low Side Load Switch 30 V 100 mW @ 4.5 V 1.5 A DC-DC Converters (Buck and Boost Circuits) 140 mW @ 2.5 V 1.0 A Optimized for ... See More ⇒

9.1. Size:100K onsemi
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NTS4101P Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70 Features Leading -20 V Trench for Low RDS(on) http //onsemi.com -2.5 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2x2 mm) 83 mW @ -4.5 V Pb-Free Package is Available -20 V 88 mW @ -3.6 V -1.37 A Applications High Side Load Switch 104 mW @ -2.5... See More ⇒

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