NTUD3127C Datasheet and Replacement
Type Designator: NTUD3127C
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 0.125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.16(0.14) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 24(37) nS
Cossⓘ - Output Capacitance: 3(2.7) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3(5) Ohm
Package: SOT963
NTUD3127C substitution
NTUD3127C Datasheet (PDF)
ntud3127c-d.pdf

NTUD3127CSmall Signal MOSFET20 V, 200 mA / -180 mA, Complementary,1.0 x 1.0 mm SOT-963 PackageFeatures http://onsemi.com Complementary MOSFET Device 1.5 V Gate Voltage RatingV(BR)DSS RDS(on) Max ID Max Ultra Thin Profile (
ntud3128n.pdf

NTUD3128NSmall Signal MOSFET20 V, 200 mA, Dual N-Channel, 1.0 mm x1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual N-Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage3.0 W @ 4.5 V 1.5 V Gate Voltage Rating20 V 0.2 A4.0 W @ 2.5 V Ultra Thin Profile (
ntud3129p.pdf

NTUD3129PSmall Signal MOSFET-20 V, -180 mA, Dual P-Channel,1.0 x 1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual P-Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage5.0 W @ -4.5 V 1.5V Gate Voltage Rating7.0 W @ -2.5 V-20 V -0.18 A Ultra Thin Profile (
Datasheet: NTTFS4932N , NTTFS4937N , NTTFS4939N , NTTFS4941N , NTTFS5116PL , NTTFS5811NL , NTTFS5820NL , NTTFS5826NL , SKD502T , NTUD3169CZ , NTUD3170NZ , NTZD3152P , NTZD3154N , NTZD3155C , NTZD5110N , NTZS3151P , FDB075N15AF085 .
History: BR80N08 | AP09T10GP-HF
Keywords - NTUD3127C MOSFET datasheet
NTUD3127C cross reference
NTUD3127C equivalent finder
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History: BR80N08 | AP09T10GP-HF



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