NVD5890N MOSFET Datasheet: N-Ch, 40V, 123A. Full specification with pinout and replacement list

NVD5890N Specs and Replacement

Type Designator: NVD5890N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 123 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 785 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm

Package: DPAK

NVD5890N substitution

- MOSFET ⓘ Cross-Reference Search

NVD5890N datasheet

..1. Size:116K onsemi
nvd5890n.pdf pdf_icon

NVD5890N Power MOSFET 40 V, 123 A, Single N-Channel DPAK Features Low RDS(on) to Minimize Conduction Losses MSL 1/260 C http //onsemi.com AEC Q101 Qualified and PPAP Capable 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) ID Compliant 40 V 3.7 mW @ 10 V 123 A Applications Motor Drivers D Pump Drive... See More ⇒

0.1. Size:106K onsemi
nvd5890nt4g.pdf pdf_icon

0.2. Size:113K onsemi
nvd5890nl.pdf pdf_icon

NVD5890NL Power MOSFET 40 V, 3.7 mW, 123 A, Single N-Channel DPAK Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com MSL 1 @ 260 C 100% Avalanche Tested V(BR)DSS RDS(ON) MAX ID MAX AEC Q101 Qualified and PPAP Capable 3.7 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 40 V 123 A Compliant 5.5 mW @ 4.5 V MAXIMUM RATI... See More ⇒

9.1. Size:135K onsemi
nvd5863nl.pdf pdf_icon

NVD5863NL Power MOSFET 60 V, 7.1 mW, 82 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified http //onsemi.com AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) ID Compliant 7.1 mW @ 10 V 60 V 82 A MAXIMUM RATINGS (TJ = 25 C unless otherwise not... See More ⇒