NVD5890N MOSFET. Datasheet pdf. Equivalent
Type Designator: NVD5890N
Marking Code: 5890N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 123 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 74 nC
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 785 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: DPAK
NVD5890N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVD5890N Datasheet (PDF)
nvd5890n.pdf
NVD5890NPower MOSFET40 V, 123 A, Single N-Channel DPAKFeatures Low RDS(on) to Minimize Conduction Losses MSL 1/260Chttp://onsemi.com AEC Q101 Qualified and PPAP Capable 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant40 V 3.7 mW @ 10 V 123 AApplications Motor DriversD Pump Drive
nvd5890nt4g.pdf
NVD5890NPower MOSFET40 V, 123 A, Single N-Channel DPAKFeatures Low RDS(on) to Minimize Conduction Losses MSL 1/260Chttp://onsemi.com AEC Q101 Qualified and PPAP Capable 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant40 V 3.7 mW @ 10 V 123 AApplications Motor DriversD Pump Drive
nvd5890nl.pdf
NVD5890NLPower MOSFET40 V, 3.7 mW, 123 A, Single N-ChannelDPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com MSL 1 @ 260C 100% Avalanche TestedV(BR)DSS RDS(ON) MAX ID MAX AEC Q101 Qualified and PPAP Capable3.7 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS40 V123 ACompliant5.5 mW @ 4.5 VMAXIMUM RATI
nvd5863nl.pdf
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nvd5865nl.pdf
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nvd5807n.pdf
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nvd5805n.pdf
NTD5805N, NVD5805NPower MOSFET40 V, 51 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q10116 mW @ 5.0 VQualified and PPAP Capable40 V51 A These Devices
nvd5802n.pdf
NTD5802N, NVD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID 100% Avalanche Tested4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requirin
nvd5803n.pdf
NVD5803NPower MOSFET40 V, 85 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant40 V 5.7 mW @ 10 V 85 AApplications DC Motor DriveD Reverse Battery Protection G
ntd5802n nvd5802n.pdf
NTD5802N, NVD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID 100% Avalanche Tested4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requiring
nvd5862n.pdf
NVD5862NPower MOSFET60 V, 5.7 mW, 98 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant60 V 5.7 mW @ 10 V 98 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted
nvd5867nl.pdf
NVD5867NLPower MOSFET60 V, 22 A, 39 mW, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capabilitywww.onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS39 mW @ 10 VCompliant60 V 22 A50 mW @ 4.5 VMAXIMUM RATINGS (TJ =
nvd5806n.pdf
NTD5806N, NVD5806NPower MOSFET40 V, 33 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable - NVD5806NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant26 mW @ 4.5 V40 V33 AApplications19 mW @ 10 V CCFL BacklightD
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