All MOSFET. NVD5890N Datasheet

 

NVD5890N Datasheet and Replacement


   Type Designator: NVD5890N
   Marking Code: 5890N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 123 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 74 nC
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 785 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: DPAK
 

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NVD5890N Datasheet (PDF)

 ..1. Size:116K  onsemi
nvd5890n.pdf pdf_icon

NVD5890N

NVD5890NPower MOSFET40 V, 123 A, Single N-Channel DPAKFeatures Low RDS(on) to Minimize Conduction Losses MSL 1/260Chttp://onsemi.com AEC Q101 Qualified and PPAP Capable 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant40 V 3.7 mW @ 10 V 123 AApplications Motor DriversD Pump Drive

 0.1. Size:106K  onsemi
nvd5890nt4g.pdf pdf_icon

NVD5890N

NVD5890NPower MOSFET40 V, 123 A, Single N-Channel DPAKFeatures Low RDS(on) to Minimize Conduction Losses MSL 1/260Chttp://onsemi.com AEC Q101 Qualified and PPAP Capable 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant40 V 3.7 mW @ 10 V 123 AApplications Motor DriversD Pump Drive

 0.2. Size:113K  onsemi
nvd5890nl.pdf pdf_icon

NVD5890N

NVD5890NLPower MOSFET40 V, 3.7 mW, 123 A, Single N-ChannelDPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com MSL 1 @ 260C 100% Avalanche TestedV(BR)DSS RDS(ON) MAX ID MAX AEC Q101 Qualified and PPAP Capable3.7 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS40 V123 ACompliant5.5 mW @ 4.5 VMAXIMUM RATI

 9.1. Size:135K  onsemi
nvd5863nl.pdf pdf_icon

NVD5890N

NVD5863NLPower MOSFET60 V, 7.1 mW, 82 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant7.1 mW @ 10 V60 V 82 AMAXIMUM RATINGS (TJ = 25C unless otherwise not

Datasheet: NUS3116MT , NUS5530MN , NUS5531MT , NVD5803N , NVD5862N , NVD5863NL , NVD5865NL , NVD5867NL , MMIS60R580P , NVMFD5877NL , NVMFS4841N , NVTFS4823N , NVTFS4824N , NVTFS5116PL , NVTFS5811NL , NVTFS5820NL , NVTFS5826NL .

History: FDPF4D5N10C

Keywords - NVD5890N MOSFET datasheet

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