NVTFS5820NL Specs and Replacement
Type Designator: NVTFS5820NL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 29 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: WDFN8
NVTFS5820NL substitution
- MOSFET ⓘ Cross-Reference Search
NVTFS5820NL datasheet
nvtfs5820nl-d.pdf
NVTFS5820NL Power MOSFET 60 V, 11.5 mW, Single N-Channel, m8FL Features Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified V(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices* 11.5 mW @ 10 V 60 V 29 A MAXIMUM RATINGS (TJ = 25 C unless o... See More ⇒
nvtfs5826nl-d.pdf
NVTFS5826NL Power MOSFET 60 V, 24 mW, 20 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com NV Prefix for Automotive and Other Applications Requiring AEC-Q101 Qualified Site and Change Controls V(BR)DSS RDS(on) MAX ID MAX These are Pb-F... See More ⇒
nvtfs5826nl.pdf
NVTFS5826NL Power MOSFET 60 V, 24 mW, 20 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5826NLWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 24 mW @ 10 V These Devices are Pb-F... See More ⇒
Detailed specifications: NVD5867NL, NVD5890N, NVMFD5877NL, NVMFS4841N, NVTFS4823N, NVTFS4824N, NVTFS5116PL, NVTFS5811NL, AON7403, NVTFS5826NL, SCH1330, SCH1331, SCH1332, SCH1334, SCH1335, SCH1337, SCH1430
Keywords - NVTFS5820NL MOSFET specs
NVTFS5820NL cross reference
NVTFS5820NL equivalent finder
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