TF256TH MOSFET. Datasheet pdf. Equivalent
Type Designator: TF256TH
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.001 A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 15000 Ohm
Package: VTFP
TF256TH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TF256TH Datasheet (PDF)
tf256th.pdf
Ordering number : ENA1617BTF256THN-Channel JFEThttp://onsemi.com20V, 140 to 450 A, 1.7mS, VTFPFeatures High gain : GV=2.7dB typ (VCC=2V, RL=2.2k , Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products Best suited for use in electret condenser microphone for audio equipments and telephones Excellent transient characteris
tf256.pdf
TF256Ordering number : ENA1616ASANYO SemiconductorsDATA SHEETN-channel Silicon Juncton FETElectret Condenser MicrophoneTF256ApplicationsFeatures High gain : GV=2.7dB typ (VCC=2V, RL=2.2k , Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products [1.0mm 0.6mm 0.27mm (max 0.3mm)] Best suited for use in electret condenser
aotf256l.pdf
AOTF256L150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOTF256L uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 12Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aotf256l.pdf
isc N-Channel MOSFET Transistor AOTF256LFEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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