All MOSFET. FDBL86361F085 Datasheet

 

FDBL86361F085 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDBL86361F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 429 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 300 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 172 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: HPSOF

 FDBL86361F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDBL86361F085 Datasheet (PDF)

 5.1. Size:479K  fairchild semi
 fdbl86361 f085.pdf

FDBL86361F085 FDBL86361F085

December 2014FDBL86361_F085N-Channel PowerTrench MOSFET80 V, 300 A, 1.4 m Features Typical RDS(on) = 1.1 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 172 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS Compliant Qualified to AEC Q101Applications G Automotive Engine Control PowerTrain Management Solenoid and Motor DriversS Integrated Starter/Alternato

 5.2. Size:460K  onsemi
 fdbl86361-f085.pdf

FDBL86361F085 FDBL86361F085

MOSFET - POWERTRENCH)N-Channel80 V, 300 A, 1.4 mWFDBL86361-F085Featureswww.onsemi.com Typical RDS(on) = 1.1 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 172 nC at VGS = 10 V, ID = 80 AD UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantApplicationsG Automotive Engine Control PowerTrain Managemen

 6.1. Size:394K  fairchild semi
 fdbl86366 f085.pdf

FDBL86361F085 FDBL86361F085

April 2015FDBL86366_F085N-Channel PowerTrench MOSFET80 V, 220 A, 3.0 m Features Typical RDS(on) = 2.4 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 AD UIS Capability RoHS Compliant Qualified to AEC Q101Applications G Automotive Engine Control PowerTrain ManagementS Solenoid and Motor Drivers Integrated Starter/Alternator For

 6.2. Size:393K  fairchild semi
 fdbl86363 f085.pdf

FDBL86361F085 FDBL86361F085

April 2015FDBL86363_F085N-Channel PowerTrench MOSFET80 V, 240 A, 2.0 m Features Typical RDS(on) = 1.5 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 AD UIS Capability RoHS Compliant Qualified to AEC Q101Applications G Automotive Engine Control PowerTrain ManagementS Solenoid and Motor Drivers Integrated Starter/Alternator Fo

 6.3. Size:486K  onsemi
 fdbl86366-f085.pdf

FDBL86361F085 FDBL86361F085

MOSFET POWERTRENCH)N-Channel80 V, 220 A, 3.0 mWFDBL86366-F085Featureswww.onsemi.com Typical RDS(on) = 2.4 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 86 nC at VGS = 10 V, ID = 80 AD UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantApplicationsG Automotive Engine Control PowerTrain Manageme

 6.4. Size:366K  onsemi
 fdbl86363-f085.pdf

FDBL86361F085 FDBL86361F085

FDBL86363-F085N-Channel PowerTrench MOSFET 80 V, 240 A, 2.0 mFeatures Typical RDS(on) = 1.5 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 AD UIS Capability RoHS Compliant Qualified to AEC Q101ApplicationsG Automotive Engine Control PowerTrain ManagementS Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switc

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