FMP76-01T MOSFET. Datasheet pdf. Equivalent
Type Designator: FMP76-01T
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 132 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Id|ⓘ - Maximum Drain Current: 54 A
Qgⓘ - Total Gate Charge: 197 nC
trⓘ - Rise Time: 20 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: ISOPLUSI4
FMP76-01T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FMP76-01T Datasheet (PDF)
fmp76-010t.pdf
Advance Technical Information P CH. N CH.TrenchTM P & N-ChannelFMP76-010TPower MOSFETVDSS - 100V 100VCommon Drain Topology34 ID25 - 54A 62AT155 RDS(on) 24m 11m 43trr(typ) 70ns 67nsT21122ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsTJ -55 ... +150 CTJM 150 CTstg -55 ... +150 CVISOLD 50/60HZ, RMS, t =
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918