GMM3x160-0055X2-SMD MOSFET. Datasheet pdf. Equivalent
Type Designator: GMM3x160-0055X2-SMD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 15 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Drain Current |Id|: 150 A
Rise Time (tr): 100 nS
Maximum Drain-Source On-State Resistance (Rds): 0.0031 Ohm
Package: ISOPLUSDIL
GMM3x160-0055X2-SMD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GMM3x160-0055X2-SMD Datasheet (PDF)
0.1. gmm3x160-0055x2-smd.pdf 
Size:172K _ixys
GMM 3x160-0055X2 VDSS = 55 VThree phase full BridgeID25 = 150 Awith Trench MOSFETsRDSon typ. = 2.2 mWin DCB isolated high current packageL1+ L2+ L3+G1 G3 G5S1 S3 S5L1 L2 L3G2 G4 G6S2 S4 S6L1- L2- L3-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TVJ = 25C to 150C 55 V - electric power steering VGS 20 V - star
8.1. gmm3x120-0075x2-smd.pdf Size:171K _ixys
GMM 3x120-0075X2 VDSS = 75 VThree phase full BridgeID25 = 110 Awith Trench MOSFETsRDSon typ. = 4.0 mWin DCB isolated high current packageL1+ L2+ L3+G1 G3 G5S1 S3 S5L1 L2 L3G2 G4 G6S2 S4 S6L1- L2- L3-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TVJ = 25C to 150C 75 V - electric power steering VGS 20 V - star
8.2. gmm3x180-004x2-smd.pdf Size:263K _ixys
GMM 3x180-004X2 VDSS = 40 VThree phase full BridgeID25 = 180 Awith Trench MOSFETsRDSon typ. = 1.9 mWin DCB isolated high current packageL1+ L2+ L3+Preliminary dataG1 G3 G5S1 S3 S5L1 L2 L3G2 G4 G6S2 S4 S6L1- L2- L3-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TVJ = 25C to 150C 40 V - electric power steering
8.3. gmm3x100-01x1-smd.pdf Size:169K _ixys
GMM 3x100-01X1 VDSS = 100 VThree phase full BridgeID25 = 90 Awith Trench MOSFETsRDSon typ. = 7.5 mWin DCB isolated high current packageL1+ L2+ L3+G1 G3 G5S1 S3 S5L1 L2 L3G2 G4 G6S2 S4 S6L1- L2- L3-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TVJ = 25C to 150C 100 V - electric power steering VGS 20 V - start
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