2SK988 Specs and Replacement

Type Designator: 2SK988

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO220F

2SK988 substitution

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2SK988 datasheet

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2SK988

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 2sk988.pdf pdf_icon

2SK988

isc N-Channel MOSFET Transistor 2SK988 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) ... See More ⇒

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 2sk981 2sk981a.pdf pdf_icon

2SK988

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Request... See More ⇒

 9.2. Size:142K  toshiba
 2sk982.pdf pdf_icon

2SK988

2SK982 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK982 High Speed Switching Applications Unit mm Analog Switch Applications Interface Applications Excellent switching times ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs @I = 50 mA D Low on resistance RDS (ON) = 0.6 (typ.) @ ID = 50 mA Enhancement-mode ... See More ⇒

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Detailed specifications: 2SK974L, 2SK974S, 2SK975, 2SK979, 2SK981, 2SK981A, 2SK985, 2SK987, IRF540N, 2SK989, 2SK990, 2SK991, 2SK992, 2SK993, 2SK994, 2SK995, 2SK996

Keywords - 2SK988 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs