IXFA10N60P PDF and Equivalents Search

 

IXFA10N60P Specs and Replacement

Type Designator: IXFA10N60P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.74 Ohm

Package: TO263

IXFA10N60P substitution

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IXFA10N60P datasheet

 9.1. Size:173K  ixys
 ixfa14n60p3 ixfh14n60p3.pdf pdf_icon

IXFA10N60P

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA14N60P3 Power MOSFETs ID25 = 14A IXFP14N60P3 RDS(on) 540m IXFH14N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 15... See More ⇒

 9.2. Size:252K  ixys
 ixfa16n50p ixfh16n50p ixfp16n50p.pdf pdf_icon

IXFA10N60P

IXFA 16N50P VDSS = 500 V PolarHVTM HiPerFET IXFH 16N50P ID25 = 16 A Power MOSFET IXFP 16N50P RDS(on) 400 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V ... See More ⇒

 9.3. Size:278K  ixys
 ixfp12n65x2m ixfp12n65x2 ixfa12n65x2 ixfh12n65x2.pdf pdf_icon

IXFA10N60P

X2-Class HiPERFET VDSS = 650V IXFA12N65X2 Power MOSFET ID25 = 12A IXFP12N65X2 RDS(on) 310m IXFH12N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Tr... See More ⇒

 9.4. Size:166K  ixys
 ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf pdf_icon

IXFA10N60P

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA16N60P3 Power MOSFETs ID25 = 16A IXFP16N60P3 RDS(on) 440m IXFH16N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 15... See More ⇒

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Detailed specifications: FDMS0302S, GWM160-0055X1-SMD, FCP190N65F, GWM180-004X2-SL, FCH043N60, GWM180-004X2-SMD, FDB86360F085, IXFA102N15T, IRFZ24N, IXFA10N80P, IXFA110N15T2, IXFA12N50P, IXFA130N10T, IXFA130N10T2, IXFA14N60P, IXFA16N50P, IXFA180N10T2

Keywords - IXFA10N60P MOSFET specs

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