IXFA16N50P PDF and Equivalents Search

 

IXFA16N50P Specs and Replacement

Type Designator: IXFA16N50P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO263

IXFA16N50P substitution

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IXFA16N50P datasheet

 ..1. Size:252K  ixys
ixfa16n50p ixfh16n50p ixfp16n50p.pdf pdf_icon

IXFA16N50P

IXFA 16N50P VDSS = 500 V PolarHVTM HiPerFET IXFH 16N50P ID25 = 16 A Power MOSFET IXFP 16N50P RDS(on) 400 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V ... See More ⇒

 0.1. Size:173K  ixys
ixfa16n50p3 ixfh16n50p3 ixfp16n50p3.pdf pdf_icon

IXFA16N50P

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 500V IXFA16N50P3 Power MOSFETs ID25 = 16A IXFP16N50P3 RDS(on) 360m IXFH16N50P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 15... See More ⇒

 7.1. Size:166K  ixys
ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf pdf_icon

IXFA16N50P

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA16N60P3 Power MOSFETs ID25 = 16A IXFP16N60P3 RDS(on) 440m IXFH16N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 15... See More ⇒

 9.1. Size:173K  ixys
ixfa14n60p3 ixfh14n60p3.pdf pdf_icon

IXFA16N50P

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA14N60P3 Power MOSFETs ID25 = 14A IXFP14N60P3 RDS(on) 540m IXFH14N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 15... See More ⇒

Detailed specifications: IXFA102N15T, IXFA10N60P, IXFA10N80P, IXFA110N15T2, IXFA12N50P, IXFA130N10T, IXFA130N10T2, IXFA14N60P, STP65NF06, IXFA180N10T2, IXFA230N075T2, IXFA230N075T2-7, IXFA3N120, IXFA3N80, IXFA4N100P, IXFA4N100Q, IXFA5N100P

Keywords - IXFA16N50P MOSFET specs

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