All MOSFET. IXFB100N50Q3 Datasheet

 

IXFB100N50Q3 Datasheet and Replacement


   Type Designator: IXFB100N50Q3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1560 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
   Package: PLUS264
 

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IXFB100N50Q3 Datasheet (PDF)

 4.1. Size:173K  ixys
 ixfb100n50p.pdf pdf_icon

IXFB100N50Q3

IXFB 100N50PVDSS = 500 VPolarHVTM HiPerFETID25 = 100 APower MOSFET RDS(on) 49 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum Ratings PLUS264TM (IXFB)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuous 30

 9.1. Size:109K  ixys
 ixfb150n65x2.pdf pdf_icon

IXFB100N50Q3

Advance Technical InformationX2-Class HiPerFETTM VDSS = 650VIXFB150N65X2Power MOSFET ID25 = 150A RDS(on) 17m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodePLUS264TMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VGDVDGR TJ = 25C to 150C, RGS = 1M 650 VSTabVGSS Continuous 30

Datasheet: IXFA4N100P , IXFA4N100Q , IXFA5N100P , IXFA6N120P , IXFA76N15T2 , IXFA7N100P , IXFA7N80P , IXFB100N50P , HY1906P , IXFB110N60P3 , IXFB120N50P2 , IXFB132N50P3 , IXFB170N30P , IXFB210N20P , IXFB300N10P , IXFB30N120P , IXFB38N100Q2 .

History: GP28S50GN247 | SI3406 | BL10N80-P | WMK15N80M3 | SWD070R08E7T | MMFTN2302 | TMA2N60H

Keywords - IXFB100N50Q3 MOSFET datasheet

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