IXFB300N10P Specs and Replacement
Type Designator: IXFB300N10P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 300 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 200 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: PLUS264
IXFB300N10P substitution
- MOSFET ⓘ Cross-Reference Search
IXFB300N10P datasheet
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Detailed specifications: IXFA7N80P, IXFB100N50P, IXFB100N50Q3, IXFB110N60P3, IXFB120N50P2, IXFB132N50P3, IXFB170N30P, IXFB210N20P, IRFZ44N, IXFB30N120P, IXFB38N100Q2, IXFB40N110P, IXFB44N100P, IXFB44N100Q3, IXFB50N80Q2, IXFB52N90P, IXFB60N80P
Keywords - IXFB300N10P MOSFET specs
IXFB300N10P cross reference
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IXFB300N10P replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: 8N60P | IXFA5N100P | SSH8N90A | WMLL065N15HG2 | SVS5N70MN | SVS5N70D | SWT69N65K2
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