IXFB300N10P Datasheet and Replacement
Type Designator: IXFB300N10P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 300 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 200 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: PLUS264
IXFB300N10P substitution
IXFB300N10P Datasheet (PDF)
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Datasheet: IXFA7N80P , IXFB100N50P , IXFB100N50Q3 , IXFB110N60P3 , IXFB120N50P2 , IXFB132N50P3 , IXFB170N30P , IXFB210N20P , IRFZ44N , IXFB30N120P , IXFB38N100Q2 , IXFB40N110P , IXFB44N100P , IXFB44N100Q3 , IXFB50N80Q2 , IXFB52N90P , IXFB60N80P .
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