IXFC13N50 MOSFET Datasheet: N-Ch, 500V, 12A. Full specification with pinout and replacement list

IXFC13N50 Specs and Replacement

Type Designator: IXFC13N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 139 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: ISOPLUS220

IXFC13N50 substitution

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IXFC13N50 datasheet

9.1. Size:229K ixys
ixfc14n60p.pdf pdf_icon

IXFC 14N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 8 A Power MOSFET RDS(on) 630 m ISOPLUS220TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 150 C 600 V VDGR TJ... See More ⇒

9.2. Size:223K ixys
ixfc16n50p.pdf pdf_icon

IXFC 16N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 10 A Power MOSFET RDS(on) 450 m ISOPLUS220TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated ISOPLUS220TM (IXFC) Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25 C to 150 C 500 V VDGR T... See More ⇒

9.3. Size:230K ixys
ixfc110n10p.pdf pdf_icon

IXFC 110N10P VDSS = 100 V PolarHVTM HiPerFET ID25 = 60 A Power MOSFET RDS(on) 17 m ISOPLUS220TM trr 150 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 175 C 100 V VDGR TJ... See More ⇒

Detailed specifications: IXFB70N60Q2, IXFB72N55Q2, IXFB80N50Q2, IXFB82N60P, IXFB82N60Q3, IXFC10N80P, IXFC110N10P, IXFC12N80P, IRF3710, IXFC14N60P, IXFC14N80P, IXFC15N80Q, IXFC16N50P, IXFC16N80P, IXFC20N80P, IXFC22N60P, IXFC24N50