All MOSFET. IXFC26N50P Datasheet

 

IXFC26N50P Datasheet and Replacement


   Type Designator: IXFC26N50P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: ISOPLUS220
 

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IXFC26N50P Datasheet (PDF)

 ..1. Size:175K  ixys
 ixfc26n50p.pdf pdf_icon

IXFC26N50P

IXFC 26N50P VDSS = 500 VPolarHVTM HiPerFETID25 = 15 APower MOSFET RDS(on) 260 m ISOPLUS 220TM(Electrically Isolated Tab)trr 250 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS220TM (IXFC)E153432VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25

 9.1. Size:133K  ixys
 ixfc20n80p ixfr20n80p.pdf pdf_icon

IXFC26N50P

IXFC 20N80P VDSS = 800 VPolarHVTM HiPerFETIXFR 20N80P ID25 = 10 APower MOSFET RDS(on) 500 m Electrically Isolated Back Surfacetrr 250 nsN-Channel Enhancement ModeFast Recovery DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220TM (IXFC)VDSS TJ = 25C to 150C 800 VE153432VDGR TJ = 25C to

 9.2. Size:231K  ixys
 ixfc22n60p.pdf pdf_icon

IXFC26N50P

IXFC 22N60P VDSS = 600 VPolarHVTM HiPerFETID25 = 12 APower MOSFET RDS(on) 360 m ISOPLUS220TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220TM (IXFC)VDSS TJ = 25 C to 150 C 600 VE153432VDGR T

Datasheet: IXFC14N80P , IXFC15N80Q , IXFC16N50P , IXFC16N80P , IXFC20N80P , IXFC22N60P , IXFC24N50 , IXFC26N50 , K3569 , IXFC30N60P , IXFC36N50P , IXFC52N30P , IXFC60N20 , IXFC74N20P , IXFC80N085 , IXFC96N15P , IXFE180N10 .

History: P0706BD | RQJ0305EQDQA | SI2305B | KRLML6401 | P057AAT | AON6266 | FQI15P12TU

Keywords - IXFC26N50P MOSFET datasheet

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