IXFC52N30P Specs and Replacement
Type Designator: IXFC52N30P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 200 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: ISOPLUS220
IXFC52N30P substitution
- MOSFET ⓘ Cross-Reference Search
IXFC52N30P datasheet
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Detailed specifications: IXFC16N80P, IXFC20N80P, IXFC22N60P, IXFC24N50, IXFC26N50, IXFC26N50P, IXFC30N60P, IXFC36N50P, STP75NF75, IXFC60N20, IXFC74N20P, IXFC80N085, IXFC96N15P, IXFE180N10, IXFE180N20, IXFE23N100, IXFE24N100
Keywords - IXFC52N30P MOSFET specs
IXFC52N30P cross reference
IXFC52N30P equivalent finder
IXFC52N30P pdf lookup
IXFC52N30P substitution
IXFC52N30P replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IPI180N10N3 | SI7900AEDN
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