IXFE180N10 Specs and Replacement
Type Designator: IXFE180N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 176 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: ISOPLUS227
IXFE180N10 substitution
- MOSFET ⓘ Cross-Reference Search
IXFE180N10 datasheet
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Detailed specifications: IXFC26N50P, IXFC30N60P, IXFC36N50P, IXFC52N30P, IXFC60N20, IXFC74N20P, IXFC80N085, IXFC96N15P, AO3401, IXFE180N20, IXFE23N100, IXFE24N100, IXFE39N90, IXFE44N50Q, IXFE44N50QD2, IXFE44N50QD3, IXFE44N60
Keywords - IXFE180N10 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SWP540
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