IXFE44N50QD2 Specs and Replacement
Type Designator: IXFE44N50QD2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 403 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 39 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: ISOPLUS227
IXFE44N50QD2 substitution
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IXFE44N50QD2 datasheet
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Detailed specifications: IXFC80N085, IXFC96N15P, IXFE180N10, IXFE180N20, IXFE23N100, IXFE24N100, IXFE39N90, IXFE44N50Q, K4145, IXFE44N50QD3, IXFE44N60, IXFE48N50Q, IXFE48N50QD2, IXFE48N50QD3, IXFE50N50, IXFE55N50, IXFE73N30Q
Keywords - IXFE44N50QD2 MOSFET specs
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History: NTS2101P | FQD4N25 | 2SK2924 | FDS89141 | SRC65R180 | LNSC3400 | 2SK1662
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