IXFE48N50Q Datasheet and Replacement
Type Designator: IXFE48N50Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 403 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 41 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 250 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: ISOPLUS227
IXFE48N50Q substitution
IXFE48N50Q Datasheet (PDF)
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Datasheet: IXFE180N20 , IXFE23N100 , IXFE24N100 , IXFE39N90 , IXFE44N50Q , IXFE44N50QD2 , IXFE44N50QD3 , IXFE44N60 , IRF1010E , IXFE48N50QD2 , IXFE48N50QD3 , IXFE50N50 , IXFE55N50 , IXFE73N30Q , IXFE80N50 , IXFF24N100 , IXFF80N50Q2 .
History: SSB80R500S | SVF6N70MN | AP18P10GM-HF
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History: SSB80R500S | SVF6N70MN | AP18P10GM-HF
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