IXFE48N50QD2 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IXFE48N50QD2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 403 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 41 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: ISOPLUS227

Datasheet: IXFE23N100 , IXFE24N100 , IXFE39N90 , IXFE44N50Q , IXFE44N50QD2 , IXFE44N50QD3 , IXFE44N60 , IXFE48N50Q , AON7410 , IXFE48N50QD3 , IXFE50N50 , IXFE55N50 , IXFE73N30Q , IXFE80N50 , IXFF24N100 , IXFF80N50Q2 , IXFG55N50 .