IXFE55N50 Specs and Replacement
Type Designator: IXFE55N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 52 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 180 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: ISOPLUS227
IXFE55N50 substitution
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IXFE55N50 datasheet
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Detailed specifications: IXFE44N50Q , IXFE44N50QD2 , IXFE44N50QD3 , IXFE44N60 , IXFE48N50Q , IXFE48N50QD2 , IXFE48N50QD3 , IXFE50N50 , AON6380 , IXFE73N30Q , IXFE80N50 , IXFF24N100 , IXFF80N50Q2 , IXFG55N50 , IXFH100N25P , IXFH102N15T , IXFH10N100P .
History: HFP5N50S
Keywords - IXFE55N50 MOSFET specs
IXFE55N50 cross reference
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IXFE55N50 substitution
IXFE55N50 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: HFP5N50S
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