IXFH10N80P MOSFET Datasheet: N-Ch, 800V, 10A. Full specification with pinout and replacement list

IXFH10N80P Specs and Replacement

Type Designator: IXFH10N80P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO247

IXFH10N80P substitution

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IXFH10N80P datasheet

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VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 10 N90 900 V 10 A 1.1 Power MOSFETs IXFH/IXFM 12 N90 900 V 12 A 0.9 IXFH/IXFT 13 N90 900 V 13 A 0.8 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 1... See More ⇒

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Detailed specifications: IXFE73N30Q, IXFE80N50, IXFF24N100, IXFF80N50Q2, IXFG55N50, IXFH100N25P, IXFH102N15T, IXFH10N100P, BS170, IXFH110N10P, IXFH110N15T2, IXFH110N25T, IXFH120N15P, IXFH120N20P, IXFH12N100F, IXFH12N100P, IXFH12N120