All MOSFET. IXFH14N100Q2 Datasheet

 

IXFH14N100Q2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFH14N100Q2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 83 nC
   trⓘ - Rise Time: 300 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO247

 IXFH14N100Q2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFH14N100Q2 Datasheet (PDF)

 4.1. Size:116K  ixys
 ixfh14n100 ixft14n100 ixfx14n100 ixfh15n100 ixft15n100 ixfx15n100.pdf

IXFH14N100Q2 IXFH14N100Q2

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT/IXFX14 N100 1000 V 14 A 0.75 WPower MOSFETsIXFH/IXFT/IXFX15 N100 1000 V 15 A 0.70 Wtrr 200 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilyPreliminary data sheetTO-247 ADSymbol Test Conditions Maximum Ratings(IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 MW 1000 V(TAB)VGS Continuous

 7.1. Size:426K  1
 ixfh11n80 ixfm11n80 ixfh13n80 ixfm13n80 ixfh14n80 ixfm14n80 ixfh15n80 ixfm15n80.pdf

IXFH14N100Q2 IXFH14N100Q2

 7.2. Size:173K  ixys
 ixfa14n60p3 ixfh14n60p3.pdf

IXFH14N100Q2 IXFH14N100Q2

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 600VIXFA14N60P3Power MOSFETs ID25 = 14AIXFP14N60P3 RDS(on) 540m IXFH14N60P3N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXFP)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 15

 7.3. Size:257K  ixys
 ixfa14n60p ixfh14n60p ixfp14n60p.pdf

IXFH14N100Q2 IXFH14N100Q2

IXFA 14N60P VDSS = 600 VPolarHVTM HiPerFETIXFH 14N60P ID25 = 14 APower MOSFET IXFP 14N60P RDS(on) 550 m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-263 (IXFA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 600 V S(TAB)VGS Continuous 30 VV

 7.4. Size:112K  ixys
 ixfh14n80 ixfh15n80.pdf

IXFH14N100Q2 IXFH14N100Q2

HiPerFETTM Power MOSFETsVDSS ID25 RDS(on)N-Channel Enhancement Mode IXFH14N80 800 V 14 A 0.70 High dv/dt, Low trr, HDMOSTM Family IXFH15N80 800 V 15 A 0.60 trr 250 nsSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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