IXFH24N90P MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFH24N90P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 660 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6.5 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 130 nC
trⓘ - Rise Time: 300 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
Package: TO247
IXFH24N90P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFH24N90P Datasheet (PDF)
ixft24n90p ixfh24n90p.pdf
Preliminary Technical InformationVDSS = 900VIXFH24N90PPolarTM Power MOSFETID25 = 24AIXFT24N90PHiPerFETTM RDS(on) 420m N-Channel Enhancement Modetrr 300nsAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C, RGS = 1M
ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM21N50 500 V 21 A 0.25 Power MOSFETsIXFH/IXFM/IXFT24N50 500 V 24 A 0.23 IXFH/IXFT26N50 500 V 26 A 0.20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to
ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf
HiPerFETTM VDSS ID25 RDS(on)Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 IXFH/IXFT 26N50Q 500 V 26 A 0.20 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1
ixfa24n60x ixfh24n60x ixfp24n60x ixfq24n60x.pdf
Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFA24N60XPower MOSFET ID25 = 24AIXFP24N60X RDS(on) 175m IXFQ24N60XIXFH24N60XN-Channel Enhancement ModeTO-220AB (IXFP)Avalanche RatedTO-263 AA (IXFA)Fast Intrinsic DiodeGGDD (Tab)SSTO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGVDSS TJ
ixfh24n80p ixfk24n80p ixft24n80p.pdf
IXFH 24N80P VDSS = 800 VPolarHVTM HiPerFETIXFK 24N80P ID25 = 24 APower MOSFET IXFT 24N80P RDS(on) 400 m N-Channel Enhancement Mode trr 250 ns Avalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGSS Con
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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