IXFH26N50P PDF and Equivalents Search

 

IXFH26N50P Specs and Replacement

Type Designator: IXFH26N50P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: TO247

IXFH26N50P substitution

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IXFH26N50P datasheet

 ..1. Size:323K  ixys
 ixfv26n50p ixfh26n50p.pdf pdf_icon

IXFH26N50P

IXFH 26N50P VDSS = 500 V PolarHVTM HiPerFET IXFV 26N50P ID25 = 26 A Power MOSFET IXFV 26N50PS RDS(on) 230 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V TO-247 (IXFH) ... See More ⇒

 0.1. Size:155K  ixys
 ixfa26n50p3 ixfh26n50p3 ixfp26n50p3 ixfq26n50p3.pdf pdf_icon

IXFH26N50P

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA26N50P3 ID25 = 26A Power MOSFETs IXFP26N50P3 RDS(on) 230m IXFQ26N50P3 N-Channel Enhancement Mode IXFH26N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ... See More ⇒

 5.1. Size:158K  ixys
 ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf pdf_icon

IXFH26N50P

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM21N50 500 V 21 A 0.25 Power MOSFETs IXFH/IXFM/IXFT24N50 500 V 24 A 0.23 IXFH/IXFT26N50 500 V 26 A 0.20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to... See More ⇒

 5.2. Size:145K  ixys
 ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf pdf_icon

IXFH26N50P

HiPerFETTM VDSS ID25 RDS(on) Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 IXFH/IXFT 26N50Q 500 V 26 A 0.20 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 ... See More ⇒

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Detailed specifications: IXFH22N60P3, IXFH230N075T2, IXFH230N10T, IXFH23N60Q, IXFH23N80Q, IXFH24N50Q, IXFH24N80P, IXFH24N90P, IRFP460, IXFH26N55Q, IXFH26N60P, IXFH28N50F, IXFH28N50Q, IXFH28N60P3, IXFH30N40Q, IXFH30N50P, IXFH30N50Q3

Keywords - IXFH26N50P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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