All MOSFET. IXFH26N55Q Datasheet

 

IXFH26N55Q Datasheet and Replacement


   Type Designator: IXFH26N55Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: TO247
 

 IXFH26N55Q substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXFH26N55Q Datasheet (PDF)

 6.1. Size:158K  ixys
ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf pdf_icon

IXFH26N55Q

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM21N50 500 V 21 A 0.25 Power MOSFETsIXFH/IXFM/IXFT24N50 500 V 24 A 0.23 IXFH/IXFT26N50 500 V 26 A 0.20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to

 6.2. Size:145K  ixys
ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf pdf_icon

IXFH26N55Q

HiPerFETTM VDSS ID25 RDS(on)Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 IXFH/IXFT 26N50Q 500 V 26 A 0.20 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1

 6.3. Size:155K  ixys
ixfa26n50p3 ixfh26n50p3 ixfp26n50p3 ixfq26n50p3.pdf pdf_icon

IXFH26N55Q

Advance Technical InformationPolar3TM HiperFETTM VDSS = 500VIXFA26N50P3ID25 = 26APower MOSFETsIXFP26N50P3 RDS(on) 230m IXFQ26N50P3N-Channel Enhancement Mode IXFH26N50P3Avalanche RatedTO-220AB (IXFP)Fast Intrinsic RectifierTO-263 AA (IXFA)GGDD (Tab)SSTO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGVDSS TJ

 6.4. Size:323K  ixys
ixfv26n50p ixfh26n50p.pdf pdf_icon

IXFH26N55Q

IXFH 26N50P VDSS = 500 VPolarHVTM HiPerFETIXFV 26N50P ID25 = 26 APower MOSFET IXFV 26N50PS RDS(on) 230 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V TO-247 (IXFH)

Datasheet: IXFH230N075T2 , IXFH230N10T , IXFH23N60Q , IXFH23N80Q , IXFH24N50Q , IXFH24N80P , IXFH24N90P , IXFH26N50P , IRFZ44 , IXFH26N60P , IXFH28N50F , IXFH28N50Q , IXFH28N60P3 , IXFH30N40Q , IXFH30N50P , IXFH30N50Q3 , IXFH30N60P .

History: STU90N4F3 | FDS7066N7 | RQ3E150MN | CSD19505KCS | RTR025P02FRA | CEM8435A | IPD90N04S4L-04

Keywords - IXFH26N55Q MOSFET datasheet

 IXFH26N55Q cross reference
 IXFH26N55Q equivalent finder
 IXFH26N55Q lookup
 IXFH26N55Q substitution
 IXFH26N55Q replacement

 

 
Back to Top

 


 
.