IXFK240N15T2
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFK240N15T2
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1250
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 240
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 460
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052
Ohm
Package:
TO264
IXFK240N15T2
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFK240N15T2
Datasheet (PDF)
8.1. Size:124K ixys
ixfk24n100q3 ixfx24n100q3.pdf
Advance Technical InformationHiperFETTM VDSS = 1000VIXFK24N100Q3Power MOSFETs ID25 = 24AIXFX24N100Q3 Q3-Class RDS(on) 440m trr 300nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic Rectifier TO-264 (IXFK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 1000 V DSVDGR TJ = 25C to 150
8.2. Size:133K ixys
ixfk24n100 ixfx24n100.pdf
VDSS = 1000VHiPerFETTM PowerIXFK24N100ID25 = 24AMOSFETsIXFX24N100 RDS(on) 390m t 250nsrrN-Channel Enhancement ModeAvalanche RatedFast Intrisic DiodeTO-264 (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VG (T
8.3. Size:158K ixys
ixfh24n80p ixfk24n80p ixft24n80p.pdf
IXFH 24N80P VDSS = 800 VPolarHVTM HiPerFETIXFK 24N80P ID25 = 24 APower MOSFET IXFT 24N80P RDS(on) 400 m N-Channel Enhancement Mode trr 250 ns Avalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGSS Con
Datasheet: IXFK200N10P
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